Nitride Gate Structure Integrating HEMT and Schottky Junctions

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Solution Overview

Problem

Current nitride-based semiconductor devices face challenges in integrating high-electron-mobility transistors (HEMTs) with Schottky diodes without increasing device size and complexity, as separate configurations for HEMT and Schottky diodes require additional space and connections.

Innovation Solution

A nitride-based semiconductor device configuration is developed, where a conductive layer forms a metal-semiconductor junction with doped nitride-based semiconductor layers, creating a Schottky junction integrated within the gate structure, allowing for both HEMT and Schottky diode functionality in a single device without increasing dimensions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If separate configurations for HEMT and Schottky diodes are used, then device functionality is achieved, but device size and complexity increase

Engineering Contradiction:

Improvedevice functionalityVSAvoiddevice size and complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges the HEMT and Schottky diode configurations into a single integrated device structure. The gate structure of the HEMT is combined with doped nitride-based semiconductor layers and a conductive layer to form both the HEMT channel and the Schottky junction, eliminating the need for separate device configurations and reducing overall device size and complexity.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The integrated gate structure serves multiple functions simultaneously: it acts as the gate for the HEMT device while also forming the Schottky junction for diode functionality. The doped nitride-based semiconductor layers and conductive layer configuration enables the same structural region to perform both transistor gating and rectification functions.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If separate configurations for HEMT and Schottky diodes are used, then device functionality is achieved, but additional space and connections are required

Engineering Contradiction:

Improvedevice functionalityVSAvoiddevice area

Core Design Contradiction:

Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If multiple processing steps are used to form both Schottky and ohmic contacts, then contact quality is improved, but manufacturing complexity increases

Engineering Contradiction:

Improvecontact qualityVSAvoidmanufacturing process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges the formation of Schottky and ohmic contacts into a single integrated manufacturing sequence. By combining the metal layer deposition that forms Schottky contacts with subsequent processing steps that form ohmic contacts to doped regions, the patent reduces the number of separate processing campaigns while maintaining contact quality.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent performs preliminary doping of nitride-based semiconductor layers during the epitaxial growth stage, before metal contact formation. This preliminary action of creating doped regions during layer formation simplifies subsequent contact fabrication by pre-positioning the ohmic contact sites, reducing the need for additional complex doping steps.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This integration enhances electrical properties by promoting saturation current and maintaining device size within acceptable limits, suitable for applications like DC-DC converter circuits.

Implementation Method 1

The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween

Methodology Applied

Scientific EffectMetal-semiconductor junction (Schottky junction):

Data Source

PatentUS12159931B2Nitride-based semiconductor device and method for manufacturing the same

Publication Date: 2024.12.03 INNOSCIENCE (SUZHOU) TECH CO LTD

AI summary

A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.