Nitride Semiconductor Layer Structure for Low-Leakage Isolation
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Solution Overview
Problem
Conventional nitride semiconductor devices suffer from deteriorated off characteristics due to electric field concentration in isolation trenches, leading to increased leakage current and decreased voltage resistance.
Innovation Solution
A nitride semiconductor device design featuring a substrate with specific layer structures and geometries, including a groove and openings, where the distance between the bottom of the opening and the substrate is shorter than the distance between the bottom of the groove and the substrate, concentrating the electric field on a high-quality pn junction to reduce leakage current and maintain voltage resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an isolation trench is provided to separate the semiconductor device, then device separation is achieved, but electric field concentration occurs leading to increased leakage current and decreased voltage resistance
Solution Approach 1:
The patent applies local quality by creating a high-resistance region specifically at the bottom of the groove where electric field concentration occurs. This localized modification of electrical properties (through impurity introduction or layer structure) addresses the harmful electric field concentration without changing the overall device structure, thereby improving off characteristics while maintaining the isolation function.
Solution Approach 2:
The patent introduces a high-resistance region as an intermediary element between the groove structure and the surrounding semiconductor layers. This intermediate layer acts as a buffer that mitigates the electric field concentration effect, reducing leakage current and preventing the harmful effects of the groove structure on device performance.
2Reliability
If the groove penetrates deep into the substrate, then isolation effect is enhanced, but manufacturing complexity and damage risk increase
Solution Approach 1:
The patent applies partial action by having the groove penetrate only to a specific depth (through the second semiconductor layer to reach the first semiconductor layer) rather than completely through the substrate. This partial penetration provides sufficient isolation effect while avoiding the increased manufacturing complexity and damage risk associated with deeper grooves.
Solution Approach 2:
The patent localizes the groove structure to specific regions where isolation is needed, rather than creating deep grooves throughout the entire device. By combining localized groove placement with controlled depth and high-resistance region formation, the isolation effect is enhanced without proportionally increasing manufacturing complexity.
Data Source
AI summary
A nitride semiconductor device includes: a substrate; a first semiconductor layer disposed above the substrate; a second semiconductor layer disposed above the first semiconductor layer; a third semiconductor layer disposed above the second semiconductor layer; a first opening which penetrates through the third semiconductor layer and the second semiconductor layer to reach the first semiconductor layer; a semiconductor multilayer including a channel region; a fourth semiconductor layer disposed along the upper surface of the semiconductor multilayer; a gate electrode; a source electrode; a drain electrode; and a groove which is provided at an end portion of the nitride semiconductor device and penetrates through the second semiconductor layer to reach the first semiconductor layer, and a distance between the bottom of the first opening and the substrate is shorter than a distance between the bottom of the groove and the substrate.