Nitride Semiconductor PN Diode for Avalanche Breakdown Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices using nitride semiconductors face limitations in improving characteristics such as electron mobility and breakdown voltage, particularly in preventing avalanche breakdown and maintaining high-temperature operation.
Innovation Solution
The semiconductor device incorporates a pn diode structure between the buffer layer and the channel underlying layer, with the n-type layer coupled to the drain electrode and the p-type layer coupled to the source electrode, preventing avalanche breakdown and enabling high-temperature operation by using a nitride semiconductor pn diode within the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor device structure is used, then manufacturing is simpler, but avalanche breakdown cannot be effectively prevented and high-temperature operation is not achieved
Solution Approach 1:
The device is segmented into distinct functional regions: a drift region with graded doping concentration, a breakdown prevention region with specific doping, and a high electron mobility transistor structure. This segmentation allows each region to perform its specific function optimally, with the drift region handling voltage blocking and the breakdown prevention region specifically addressing avalanche breakdown
Solution Approach 2:
Different regions of the semiconductor device are given different local properties: the drift region has graded doping concentration for voltage blocking, the breakdown prevention region has specific doping concentration and type for preventing avalanche breakdown, and the AlGaN/GaN heterostructure provides high electron mobility. Each region's properties are locally optimized for its specific function
2Temperature
If the device operates at high temperature, then performance is enhanced, but avalanche breakdown occurs more frequently
Solution Approach 1:
A breakdown prevention region is created beforehand in the device structure, positioned between the drift region and the cathode. This region is doped with a specific concentration and type of dopant to cushion against avalanche breakdown before it can occur during high-temperature operation, providing protective action in advance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively inhibits avalanche breakdown, reduces on-resistance per unit area, and allows for higher integration and operation at elevated temperatures, enhancing the device's performance and reliability.
Implementation Method 1
preventing avalanche breakdown and enabling high-temperature operation by using a nitride semiconductor pn diode within the device
Implementation Method 2
an MISFET made of gallium nitride is advantageous in that (1) a breakdown electric field is large, (2) an electron saturation velocity is high
Implementation Method 3
an excellent heterojunction can be formed between AlGaN and GaN
Implementation Method 4
a gate electrode that is arranged above the channel layer
Implementation Method 5
the p-type layer and the source electrode are coupled to each other by a connection portion within a through-hole that reaches the p-type layer
Data Source
AI summary
The semiconductor device includes a trench that penetrates a barrier layer, and reaches a middle portion of a channel layer among an n+ layer, an n-type layer, a p-type layer, the channel layer, and the barrier layer which are formed above a substrate, a gate electrode arranged within the groove through a gate insulating film, and a source electrode and a drain electrode which are formed above the barrier layer on both sides of the gate electrode. The n-type layer and the drain electrode are electrically coupled by a connection portion that reaches the n+ layer. The p-type layer and the source electrode are electrically coupled by a connection portion that reaches the p-type layer. A diode including a p-type layer and an n-type layer is provided between the source electrode and the drain electrode, to thereby prevent the breaking of an element caused by an avalanche breakdown.