Nitride Semiconductor Device with Integrated Light-Emitting Body
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Solution Overview
Problem
Conventional GaN power devices suffer from current collapse due to electron trapping, leading to increased ON-resistance and reduced switching characteristics, which is not adequately addressed by existing solutions that either fail to position light-emitting diodes (LEDs) close enough to electric field concentration areas or increase manufacturing costs and chip size.
Innovation Solution
A nitride semiconductor device with a pn light-emitting body integrated within the transistor structure, where the p-type and n-type nitride semiconductor layers emit light with energy higher than electron trapping levels, effectively releasing trapped electrons and preventing current collapse without increasing chip size or manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a light-emitting diode (LED) is formed on a back surface or front surface of an FET to prevent current collapse, then switching characteristics are improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges the LED and FET into a single integrated device structure where the LED is formed within the FET's semiconductor stack. The p-type and n-type nitride semiconductor layers of the LED are integrated with the FET's channel layer, drain layer, and source layer, eliminating the need for separate LED and FET components and reducing overall device complexity while maintaining current collapse prevention functionality
Solution Approach 2:
The nitride semiconductor layers serve multiple functions simultaneously: they act as both the active region for light emission (preventing current collapse) and as part of the FET's conductive path (source, drain, and channel). This multi-functionality reduces the number of separate components needed and simplifies the overall device structure
2Reliability
If an FET and LED for irradiating the FET with light beams are formed on a chip, then current collapse is prevented, but chip size increases
Solution Approach 1:
The LED structure is nested within the FET's semiconductor stack, with the p-type and n-type nitride semiconductor layers positioned between the gate electrode and the drain/source regions. This nested configuration allows the LED to be housed within the existing FET footprint without requiring additional chip area
Solution Approach 2:
The patent combines the LED and FET into a single integrated device where both functions share the same semiconductor layers and physical space. The p-type layer serves as both the LED's light-emitting region and part of the FET's source/drain structure, eliminating the need for separate dedicated areas for each component
3Reliability
If electrons are trapped in electron trap due to crystal defect or surface level, then ON-resistance increases, but switching characteristics deteriorate
Solution Approach 1:
The patent converts the harmful effect of trapped electrons (which cause current collapse and increased ON-resistance) into a beneficial effect by using light emission from the integrated LED to illuminate the semiconductor layers. This light energy releases the trapped electrons, transforming the original problem into a solution that actively prevents current collapse and maintains low ON-resistance
Solution Approach 2:
The integrated LED provides real-time feedback by emitting light that immediately interacts with trapped electrons in the semiconductor layers. When electrons become trapped and cause current collapse, the LED's light emission detects and releases these electrons, creating a self-correcting mechanism that maintains optimal switching characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of the pn light-emitting body efficiently prevents current collapse, reducing ON-resistance and enhancing switching characteristics while maintaining a compact device design and cost-effectiveness.
Implementation Method 1
a pn light-emitting body which includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit light beams having an energy value higher than an electron trapping level
Implementation Method 2
emit light beams having an energy value higher than an electron trapping level existing in the semiconductor stacked body
Data Source
AI summary
A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor.