Nitride Semiconductor Component With Structured Growth Substrate
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Solution Overview
Problem
Nitride semiconductor components grown on sapphire substrates often exhibit high defect densities at the interface due to lattice mismatch, leading to reduced efficiency in radiation-emitting components as radiation is absorbed at this interface.
Innovation Solution
A growth substrate with a planar area and three-dimensionally shaped surface structures is used, where the semiconductor layer sequence is grown selectively on a minimized growth area, typically less than 5% of the total surface, to reduce defect density and absorption, employing techniques like MOVPE and using nucleation layers or barrier layers to control growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If semiconductor layers are grown on a planar sapphire substrate, then the growth process is simple and uniform, but high defect density forms at the interface due to lattice mismatch
Solution Approach 1:
The substrate surface is segmented into multiple regions with different three-dimensional structures (e.g., pyramids, cones, or pillars) arranged in a pattern. This segmentation reduces the total planar growth area where defects form, while the structured regions guide selective epitaxial growth to occur primarily in specific zones, thereby reducing overall defect density in the semiconductor layer
Solution Approach 2:
Different regions of the substrate surface are given different local qualities through varying three-dimensional structures. The planar areas and structured areas have different properties that control where semiconductor growth occurs. By making the growth area a small fraction (less than 45%, preferably less than 25% or 5%) of the total surface, the defect-prone regions are minimized while maintaining functional performance
2Reliability
If the growth area is minimized to less than 5% of the total surface, then defect density and absorption are significantly reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The substrate surface is pre-structured with three-dimensional patterns before the semiconductor epitaxial growth process. This preliminary structuring (through etching, deposition, or other fabrication techniques) creates the desired growth pattern in advance, allowing the subsequent growth process to naturally follow the pre-defined paths and minimizing defects without requiring complex real-time control during manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces defect density and absorption at the interface, enhancing the efficiency and brightness of radiation-emitting nitride semiconductor components by minimizing the growth area and optimizing growth conditions.
Implementation Method 1
The functional layers of the component are usually epitaxially deposited on a suitable growth substrate
Implementation Method 2
defects may form in the semiconductor material owing to the lattice mismatch present therein
Data Source
AI summary
The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: —providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), —growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.