Nitrided Barrier Layers Preventing Copper Volcano Defects in Semiconductor Vias
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Solution Overview
Problem
The exposed vias and barrier layers in semiconductor devices are prone to over-etching, leading to weak points that result in copper volcano defects during heat treatment, affecting the reliability and yield of the semiconductor device.
Innovation Solution
A nitridation treatment is applied to increase the nitrogen doping concentration of the barrier layers lining the vias, enhancing their strength and preventing copper volcano defects by reinforcing the barrier layers during the MIM stack patterning process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If over-etching is performed to define the MIM structure, then the MIM structure can be clearly defined, but the exposed vias and barrier layers are consumed, creating weak points that lead to copper volcano defects
Solution Approach 1:
The patent applies a preliminary nitridation treatment to the barrier layer before the MIM structure definition process. This pre-treatment strengthens the barrier layer in advance, creating a protective effect that prevents copper diffusion and volcano defect formation during subsequent over-etching and heat treatment processes
Solution Approach 2:
The patent changes the chemical composition parameter of the barrier layer by introducing nitrogen through nitridation treatment. This parameter change increases the barrier layer's strength and resistance to copper diffusion, allowing the structure to withstand the over-etching process without creating weak points
2Reliability
If the barrier layer strength is increased through nitridation treatment, then copper volcano defects are prevented, but the manufacturing process complexity increases
Solution Approach 1:
The patent combines the nitridation treatment step with the existing barrier layer formation process. By integrating the nitrogen introduction process into the standard manufacturing flow, the additional reliability enhancement is achieved without proportionally increasing overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased barrier strength effectively reduces the occurrence of copper volcano defects, thereby improving the reliability and yield of the semiconductor device.
Implementation Method 1
performing a nitridation treatment on the dielectric layer and the plurality of vias, so that a nitrogen doping concentration of a top portion of the dielectric layer is greater than a nitrogen doping concentration of a bottom portion of the dielectric layer
Data Source
AI summary
Provided is a semiconductor device including a dielectric layer, a first via, a second via, a first barrier layer, and a second barrier layer. The dielectric layer has a first region and a second region. The first via is disposed in the dielectric layer in the first region. The second via is disposed in the dielectric layer in the second region. The first barrier layer lines a sidewall and a bottom surface of the first via. The second barrier layer lines a sidewall and a bottom surface of the second via. The first and second barrier layers each has an upper portion and a lower portion. The upper portion has a nitrogen doping concentration greater than a nitrogen doping concentration of the lower portion. A method of manufacturing a semiconductor device is also provided.