Nitrogen-Functionalized CMP Slurry for Fast Low-Damage Polishing

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Solution Overview

Problem

Conventional polishing slurries face challenges in achieving high polishing rates while minimizing damage and shape deformation, particularly for semiconductor devices with fine pitch structures less than or equal to 10 nm.

Innovation Solution

A polishing slurry incorporating hydrophilic nanocarbon particles with a nitrogen-containing functional group and an oxidation catalyst, which are chemically fixed on the surface, is used. These particles act as both abrasives and oxidizing agents, enhancing the polishing process by improving the decomposition rate of oxidizing agents and reducing damage to the semiconductor structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional polishing slurry is used, then polishing process is simple, but polishing rate is insufficient and damage/deformation occurs

Engineering Contradiction:
Improvepolishing rateVSAvoiddamage and shape deformation
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent uses hydrophilic nanocarbon particles with nitrogen-containing functional groups as a composite abrasive material that combines mechanical polishing capability with chemical oxidation activity, achieving both high polishing rate and reduced damage to the semiconductor structure

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent modifies the chemical composition of the nanocarbon particles by introducing nitrogen-containing functional groups (such as amino, nitro, or amide groups), which changes the surface properties and reactivity of the abrasive particles, enabling them to function as both mechanical abrasives and chemical oxidizing agents

Inventive Principle:
Principle #35Parameter changes

2Productivity

If polishing pressure is increased to improve polishing rate, then productivity increases, but damage to structure increases

Engineering Contradiction:
Improvepolishing rateVSAvoidshape deformation
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent replaces part of the mechanical polishing action with chemical oxidation by incorporating oxidizing functional groups on the nanocarbon particle surfaces, allowing material removal through chemical reaction rather than purely mechanical force, thereby reducing shape deformation and damage

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The polishing slurry effectively increases the polishing rate while reducing damage and shape deformation, such as scratches, dishing, and erosion, making it suitable for fine-pitched semiconductor structures.

Implementation Method 1

a nitrogen-containing functional group... on which an oxidation catalyst is chemically fixed

Methodology Applied
Scientific EffectCatalysis: Catalysis

Implementation Method 2

The nitrogen-containing oxidation catalyst may include at least one of an amino group, a nitro group, a secondary amine group, a tertiary amine group, a quaternary amine group, a diamine group, a polyamine group, an azo group, or an amide group

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS11795347B2Polishing slurry and method of manufacturing semiconductor device
Publication Date: 2023.10.24 SAMSUNG ELECTRONICS CO LTD
  • US11795347B2 patent drawing
  • US11795347B2 patent drawing
  • US11795347B2 patent drawing

AI summary

A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.