Other Chemical Processes TRIZ Cases

A rare-earth dimming agent lowers LED brightness by absorbing light while keeping emission wavelength and chromaticity stable in dark environments.

An HF azeotrope enables distillation or phase separation from HFC-143, HCFC-142, and HCFC-141 to recover feedstocks and cut waste.

A UV-cured urethane acrylate and phenoxy resin sheet avoids print bubbles, improves membrane adhesion, and lowers hydrogen permeability.

Polyol-added CMP slurry cuts STI oxide trench dishing while preserving oxide removal rate, nitride selectivity, and polishing window stability.

Halogenation plus ligand-assisted dissolution enables ruthenium CMP with high removal rates, smoother post-etch surfaces, and less pitting.

Per-compound oxidizers and buffered pH enable abrasive-free CMP of very hard materials at higher removal rates with less surface damage.

Offset hydrophobic regions on a rotating optical cover guide droplets to roll off, clearing foreign matter for stable image acquisition.

Low-concentration calcium carbonate slurry with dispersant and anionic surfactant polishes soft materials while limiting scratches and substrate damage.

Negative-zeta silica, iron cations, and surfactants raise carbon film removal while limiting trench erosion and polishing defects.

Hydrophilic nanocarbon particles with nitrogen groups and an oxidation catalyst raise CMP rate while reducing scratches, dishing, and erosion.

An Al(OH)3-coated aluminum-based lithium ion-sieve improves corrosion resistance while maintaining high lithium adsorption from low-concentration wastewater.

Cationic silica and amine-based additives improve silicon nitride CMP stability, selectivity, and defect control without ceria cleaning drawbacks.

A diol-modified PVA-PVP polishing composition improves wafer wettability to cut minute defects, haze, and abrasive agglomeration.

Controlled BET and NMR surface area in silica slurry keeps polishing rates high over long use on sapphire and silicon carbide.

A polyisobutylene-based photocurable sealant enables bubble-tolerant screen printing, rapid light curing, and low gas and moisture permeability.

A controlled vinyl alcohol-vinyl acetate polymer stabilizes silica slurry to cut haze and light point defects in wafer polishing.

A cyanoacrylate blend with ether-bond content and controlled suction length seals coated wires against heat, moisture, and thermal shock.

Adding trace 1,1,2,3-tetrafluorobutane stabilizes hydrohaloolefins during storage and helps prevent acid-driven metal corrosion.

A layered compound keeps abrasive particles dispersed in semiconductor polishing slurry, reducing settling, pipe blockage, and storage-related hard aggregation.

A breathable film and moisture-absorption composition keep lamp humidity low, preventing dew condensation and pouch damage.

Sub-80 nm tetragonal or cubic zirconia abrasives raise organic film polishing speed while reducing post-polish scratches on semiconductor substrates.

A hydroxy-group binder lets terephthalate MOFs sinter firmly at low temperature while preserving adsorption for battery thermal control.

A positive-zeta CMP slurry uses hydroxy acid, polyol, and a low-MW cationic additive to raise STI oxide selectivity and limit scratches.

Controlled anhydride functionalization and viscosity let this liquid diene rubber improve pumpability, dripping resistance, adhesion, and elasticity.

Sodium metavanadate, hydrogen peroxide, and silica abrasive balance fast material removal with low-scratch surface finishing.

A polymer-mediated CMP slurry keeps positive-zeta abrasive grains polishing fast while reducing residue on the polished surface.