Vertical Channel Semiconductor Layout Using Nitrogen-Doped Gate Isolation
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Solution Overview
Problem
In semiconductor device manufacturing, etching processes can lead to the formation of undesired oxide layers and electrical insulation deterioration, causing potential electrical shorts between patterns.
Innovation Solution
A semiconductor device design incorporating nitrogen-containing portions and oxide patterns, such as silicon oxynitride, is implemented to enhance electrical insulation between the gate structure and source/drain layer, reducing the risk of electrical shorts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching processes are performed to form semiconductor patterns, then semiconductor structures are formed, but undesired oxide layers are formed and electrical insulation deteriorates
Solution Approach 1:
A nitrogen-containing portion is formed at an upper portion of an uppermost one of the channels before the etching processes are performed. This preliminary nitrogen incorporation creates a protective region that prevents oxide layer formation and maintains electrical insulation during subsequent etching operations, curing and cleansing processes.
Solution Approach 2:
The patent incorporates nitrogen into the channel structure by changing the compositional parameter of the semiconductor material. This nitrogen doping modifies the chemical and electrical properties of the channel, creating a region with enhanced electrical insulation characteristics that prevents short circuits between the gate structure and source/drain layer.
2Reliability
If curing process or cleansing process is performed to remove etching residue, then patterns are cured, but undesired oxide layers are formed and patterns are removed
Solution Approach 1:
The nitrogen-containing portion is localized at the upper portion of the uppermost channel, creating a region with different chemical properties from the rest of the structure. This localized nitrogen incorporation provides selective protection during curing and cleansing processes, allowing these processes to remove residues and cure damage without forming undesired oxide layers or removing critical patterns in the protected region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enhanced insulation effectively minimizes the risk of electrical shorts between the gate structure and source/drain layer, improving the reliability and performance of the semiconductor device.
Implementation Method 1
A nitrogen-containing portion at an upper portion of an uppermost one of the channels, and doped with nitrogen
Implementation Method 2
an oxide pattern on an upper surface of an end portion of an uppermost one of the channels and including silicon oxynitride
Data Source
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AI summary
A semiconductor device includes channels (124) spaced apart from each other on a substrate (100) in a vertical direction substantially perpendicular to an upper surface of the substrate (100), a gate structure (290) on the substrate and bordering lower and upper surfaces and a first sidewall of at least a portion of each of the channels (124), and a source/drain layer (210) on a portion of the substrate (100) adjacent to the gate structure (290) and contacting second sidewalls of the channels (124). A nitrogen-containing portion (122a) is formed at an upper portion of an uppermost one of the channels (124), and may be doped with nitrogen.