Nitrogen-Doped Layer for Laser Annealing Overlap Defects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional laser annealing methods for semiconductor layers result in undesirable variations in electrical and physical characteristics due to overlap regions, making it difficult to efficiently fabricate large-sized products and leading to unusable semiconductor surfaces.
Innovation Solution
A method involving the formation of a nitrogen-doped layer with a concentration of at least 3×10^20 atoms/cc on the semiconductor layer, followed by laser annealing in a low oxygen environment, allowing for overlapping scans without adverse effects on the product regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser beam scanning is performed in overlapping sweeps to ensure complete annealing coverage, then annealing completeness is improved, but electrical and physical characteristic uniformity deteriorates due to double exposure in overlap regions
Solution Approach 1:
A nitrogen-doped layer is introduced as an intermediary between the laser beam and the semiconductor layer. This layer absorbs excess laser energy in overlap regions, preventing double exposure damage while allowing complete annealing coverage. The nitrogen-doped layer acts as a protective mediator that enables overlapping scans without compromising the electrical and physical characteristics of the underlying semiconductor layer.
Solution Approach 2:
The nitrogen-doped layer is formed in advance before laser annealing. This preliminary action prepares the semiconductor structure to withstand overlapping laser scans by providing a pre-formed protective layer that will absorb excess energy during the annealing process, thereby preventing characteristic variations in overlap regions.
2Reliability
If overlap regions are positioned outside product regions to avoid characteristic variations, then electrical and physical characteristic uniformity is maintained, but fabrication efficiency deteriorates due to reduced usable area
Solution Approach 1:
The nitrogen-doped layer serves as a mediator that enables overlap regions to be positioned within product regions. By absorbing excess laser energy, it protects the semiconductor layer in overlap areas, making these regions suitable for product fabrication and thereby improving overall fabrication efficiency without compromising characteristic uniformity.
Solution Approach 2:
The introduction of the nitrogen-doped layer changes the physical and chemical parameters of the semiconductor structure. This parameter change enables the semiconductor layer to withstand overlapping laser exposure, allowing overlap regions to be utilized for product fabrication and improving productivity.
3Productivity
If laser beam dimensions are increased to cover larger product areas in fewer sweeps, then fabrication time is reduced, but manufacturing precision deteriorates due to inability to maintain adequate overlap coverage
Solution Approach 1:
The nitrogen-doped layer acts as an intermediary that enables larger laser beam dimensions to be used effectively. It absorbs excess energy from larger beams in overlap regions, preventing damage while allowing faster fabrication. This mediator enables the use of larger beams for improved productivity without sacrificing annealing coverage precision.
Solution Approach 2:
The nitrogen-doped layer modifies the energy absorption parameters of the semiconductor structure, enabling the use of larger laser beam dimensions. This parameter change allows faster fabrication with larger beams while maintaining adequate overlap coverage through the protective nitrogen-doped layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces defects such as grain protrusion and ablation, enabling the use of overlap regions within product areas, thus improving fabrication efficiency and reducing waste, while maintaining desirable electrical and physical characteristics.
Implementation Method 1
forming a nitrogen-doped layer on the non-single-crystalline semiconductor layer... irradiating a first area of the nitrogen-doped layer... with a laser beam
Implementation Method 2
irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam... laser annealing a non-single-crystalline semiconductor layer
Data Source
AI summary
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.