Nitrogen-Containing Resist Composition for High Resolution Lithography
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Solution Overview
Problem
Conventional resist compositions for electron beam and X-ray lithography struggle to simultaneously achieve high resolution and good line edge roughness, leading to electrical characteristic failures and reduced yield due to irregularities in the resist line patterns.
Innovation Solution
A resist composition incorporating nitrogen-containing compounds with phenoxy groups and oxyalkylene groups, specifically tertiary amine compounds and ammonium salt compounds, which increase solubility in alkali developers and generate acids upon irradiation, combined with acid-decomposable resins and acid generators, to form high-resolution patterns with improved edge roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional resist compositions for electron beam and X-ray lithography are used, then high resolution can be achieved, but line edge roughness deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by introducing specific nitrogen-containing compounds (amines or ammonium salts with phenoxy groups) as additives. These compounds have specific molecular weight ranges (50-500 for amines, 100-1000 for ammonium salts) and structural characteristics that modify the resist's chemical behavior during exposure and development, enabling simultaneous achievement of high resolution and smooth line edges
Solution Approach 2:
The patent creates a composite resist system by combining conventional resist components (resin, acid generator) with specially selected nitrogen-containing compounds. This composite formulation synergistically combines the resolution-enhancing properties of conventional resists with the line-edge-smoothing properties of the nitrogen-containing additives, resolving the contradiction between resolution and edge roughness
2Measurement precision
If conventional resist compositions are used, then high resolution can be achieved, but electrical characteristic reliability worsens due to pattern irregularities
Solution Approach 1:
By modifying the chemical composition parameters and adding nitrogen-containing compounds with specific structural parameters, the patent reduces line edge irregularities that would otherwise be transferred to the substrate during etching, thereby preventing electrical characteristic failures while maintaining high resolution
Solution Approach 2:
The patent converts the potential harm of pattern irregularities into benefit by using nitrogen-containing compounds that specifically suppress edge roughness formation during the lithography process, thereby preventing the transfer of irregularities to the final pattern and ensuring electrical reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resist composition effectively enhances resolution, line edge roughness, and sidelobe margin, addressing the limitations of existing technologies by forming precise patterns that reduce electrical failures and increase yield in semiconductor processing.
Implementation Method 1
a combination of a compound capable of generating an acid upon irradiation with electron beams and an amine compound
Implementation Method 2
a compound of which solubility in an alkali developer increases under an action of an acid
Data Source
AI summary
A resist composition comprising at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group; and a pattern forming method using the composition.