Non-Planar Transistor Body With Variable Semiconductor Height
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Solution Overview
Problem
The increasing complexity of non-planar transistor channel widths in integrated circuits (ICs) limits flexibility in CMOS circuit architecture, as existing methods to vary the height of non-planar semiconductor bodies often negatively impact other transistor structures, such as gate electrodes, during fabrication.
Innovation Solution
The approach involves forming transistor structures with non-planar bodies that have variable and complementary semiconductor and insulator portions, where the active portion ranges from 100% to 10% and the inactive portion from 0% to 90%, allowing for a wide range of channel widths without significantly altering other fabrication modules or structures, by selectively oxidizing a portion of the non-planar body using a catalyst to enhance oxygen diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the height of non-planar semiconductor bodies is varied to control transistor channel width, then channel width flexibility is improved, but fabrication of other transistor structures (such as gate electrodes) is negatively impacted
Solution Approach 1:
The non-planar semiconductor body is segmented into active portions (extending to the substrate) and inactive portions (not extending to the substrate). This segmentation allows different regions to serve different functions: active portions define channel width while inactive portions provide isolation. The gate electrode fabrication can proceed uniformly across the substrate without being disrupted by height variations in active portions, as the inactive portions serve as natural isolation structures.
Solution Approach 2:
Different portions of the semiconductor body are given different properties: active portions maintain semiconductor characteristics for channel formation, while inactive portions are transformed into insulating material through oxidation. This local differentiation allows channel width to be controlled by the geometry of active portions without affecting gate electrode fabrication on inactive portions, resolving the contradiction between channel width flexibility and fabrication ease.
2Adaptability or versatility
If non-planar semiconductor bodies are coupled together to vary channel width, then channel width variation is achieved, but design flexibility is constrained by discretization
Solution Approach 1:
Instead of using fixed, discrete non-planar bodies coupled together, the invention employs a continuous semiconductor body where the active portion height can be dynamically varied. The active portion extends from the substrate to a first height, while the inactive portion extends to a second height. By controlling the relative heights (H1/H2 ratio), continuous channel width variation is achieved without discretization constraints, allowing precise tuning of transistor characteristics.
3Manufacturing precision
If techniques are used to vary non-planar transistor body height, then channel width control is improved, but other transistor structures become sensitive to body height variation
Solution Approach 1:
The inactive portion of the semiconductor body acts as an intermediary element between the active transistor structures and the substrate. By transforming this intermediate region into insulating material through oxidation, the invention provides a buffer zone that isolates active portions from substrate effects. This allows precise control of channel width in active portions without the variations affecting other transistor structures, as the inactive portions absorb the height variation effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables a wide range of transistor channel widths while maintaining a constant total sidewall height, allowing for flexible CMOS circuit architecture and straightforward fabrication of other transistor structures, such as gate electrodes, without compromising their integrity.
Implementation Method 1
selectively oxidizing a portion of the non-planar body using a catalyst to enhance oxygen diffusion
Implementation Method 2
selectively oxidizing a portion of the non-planar body using a catalyst to enhance oxygen diffusion
Data Source
AI summary
Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.