Non-Uniform Conductive Line Width for Display Aperture Ratio
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Solution Overview
Problem
As the size of elements such as TFTs and conductive contacts on display device substrates continues to reduce, existing technologies face challenges in maintaining aperture ratio and contrast, leading to issues like data line disconnection and reduced light transmittance and image display performance.
Innovation Solution
The implementation of a non-uniform conductive line width configuration, where the second conductive line has three distinct widths, and a tapered opening configuration that exposes both the top and sidewall surfaces of the semiconductor layer, ensuring full coverage and electrical connection without peeling, thereby enhancing the aperture ratio and contrast.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the size of elements such as TFTs and contacts is reduced to improve resolution, then image resolution is improved, but aperture ratio and light transmittance deteriorate
Solution Approach 1:
The conductive line is designed with non-uniform width, being wider at certain locations and narrower at others. This local variation in geometry allows the conductive line to maintain adequate current carrying capacity in critical areas while minimizing its overall footprint, thereby improving aperture ratio without sacrificing electrical performance
Solution Approach 2:
The conductive line structure transitions from a simple planar configuration to a three-dimensional form by extending vertically along the sidewall of the semiconductor layer. This vertical extension provides additional conduction path area without increasing the horizontal footprint, thus maintaining electrical connectivity while reducing the aperture ratio penalty
2Measurement precision
If the size of elements such as TFTs and contacts is reduced to improve resolution, then image resolution is improved, but light transmittance deteriorates
Solution Approach 1:
The conductive line width is optimized locally - narrower where it passes through light-emitting regions to minimize light blocking, and wider where it connects to electrodes to maintain electrical performance. This spatially varying geometry reduces overall light transmittance loss while preserving resolution benefits
Solution Approach 2:
By extending the conductive line vertically along the semiconductor layer sidewall, the horizontal cross-sectional area blocking light is reduced while the vertical conduction path is maintained or enhanced. This dimensional transition allows thinner horizontal profiles that transmit more light while still providing adequate electrical connection
3Area of stationary object
If the conductive line width is reduced to improve aperture ratio, then aperture ratio is improved, but electrical connection reliability deteriorates
Solution Approach 1:
The conductive line extends vertically along the sidewall of the semiconductor layer, creating a three-dimensional conduction path. This vertical extension compensates for reduced horizontal width by providing additional conduction area in the vertical dimension, maintaining electrical reliability while minimizing aperture ratio penalty
Solution Approach 2:
The conductive line structure combines horizontal and vertical segments with different width characteristics, creating a composite geometry that optimizes both electrical performance and aperture ratio. The structure integrates narrow horizontal portions for aperture optimization with vertical portions for electrical reliability
Data Source
AI summary
A display device includes a first substrate and an insulating layer over the first substrate. The display device further includes a semiconductor layer over the insulating layer and a dielectric layer over the semiconductor layer, having an opening partially exposing the semiconductor layer and the insulating layer, wherein the opening has a first width along a first direction. In addition, the display device further includes a conductive line extending over the dielectric layer along a second direction that is different from the first direction and filling the opening to electrically connect to the semiconductor layer exposed by the opening. The conductive line includes a first portion over a top surface of the dielectric layer and a second portion in the opening. The first portion of the conductive line has a second width along the first direction. The first width is greater than the second width.