Non-Volatile Memory Data Erasure via Damage Voltage
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Solution Overview
Problem
Current data erasing methods for non-volatile memory, such as NAND memory, are time-consuming and prone to interruption, with incomplete data erasure and security concerns, especially when power is interrupted.
Innovation Solution
A data erasing method involving a boost circuit to generate a high damage voltage, applied through a switch to physically destroy the non-volatile memory, ensuring complete data erasure and uninterrupted processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data erasing is performed using conventional I/O instructions or logic correspondence tables, then the storage device can erase data, but the process is time-consuming and can be interrupted by power loss, leaving data incompletely erased
Solution Approach 1:
The patent replaces the conventional software-based data erasing method (I/O instructions or logic correspondence table operations) with a physical destruction method using high voltage. Instead of attempting to overwrite or mark data as erased through electrical signals that can be interrupted, the system applies a damage voltage that physically destroys the memory cell structures, making the erasure process instantaneous and irreversible, thus eliminating both the time-consuming nature and the risk of interruption.
2Reliability
If logic correspondence table is used for data erasing, then the erasing process is faster, but the memory cells still retain the original data which can be easily restored
Solution Approach 1:
The patent replaces the complex software-based logic correspondence table mechanism with a simple physical destruction approach. Instead of managing complex mapping tables and multiple erase states that may leave recoverable traces, the system directly applies high voltage to physically destroy the memory cells, achieving absolute security through physical annihilation of the storage medium itself.
Solution Approach 2:
The patent changes the voltage parameter from normal operating levels to extreme damage levels. By transitioning the voltage from functional ranges (used for read/write operations) to destructive ranges (sufficient to break down memory cell structures), the system achieves complete data destruction without requiring complex control mechanisms, simply by adjusting the voltage parameter to a destructive threshold.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures complete and secure data erasure by physically destroying the memory cells, preventing data restoration and ensuring the process is not interrupted by power loss.
Implementation Method 1
A boost circuit is boosted to output a damage voltage
Data Source
AI summary
A data erasing method of a non-volatile memory and a storage device using the same are provided. The data erasing method of the non-volatile memory includes the following steps. A boost circuit is boosted to output a damage voltage. A switch is turned on to apply the damage voltage to the non-volatile memory. The switch is connected between the boost circuit and the non-volatile memory. The non-volatile memory is destroyed by the damage voltage.