Nonvolatile Storage Element Current Source Stabilization
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Solution Overview
Problem
Conventional constant current sources require large correction circuits to achieve accurate current values, leading to increased circuit size and consumption current due to manufacturing variations and temperature fluctuations.
Innovation Solution
A current source utilizing a nonvolatile storage element with a control gate region and source region, operating as a field effect transistor, which applies bias between the control gate and source regions to stabilize current output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a correction circuit is added to correct current value fluctuations due to manufacturing variations or temperatures, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent changes the physical parameters of the transistor by applying specific bias voltages between the control gate and source regions. This adjusts the threshold voltage and operating point of the transistor to compensate for manufacturing variations and temperature effects, achieving high current accuracy without adding correction circuits
Solution Approach 2:
The current source uses the nonvolatile storage element's own control gate and source regions to generate the bias voltage needed for stabilization. The element serves itself by utilizing its internal structure to compensate for variations, eliminating the need for external correction circuits
2Measurement precision
If a correction circuit is added to correct current value fluctuations, then measurement precision is improved, but use of energy increases
Solution Approach 1:
The nonvolatile storage element generates and applies the necessary bias voltage to itself using its control gate and source regions. This self-service mechanism eliminates the need for additional active correction circuits that would consume extra current, achieving accurate current output with minimal power consumption
3Stability of the object's composition
If the bias is applied between control gate region and source region in nonvolatile storage element, then stability is improved, but device complexity increases
Solution Approach 1:
The control gate and source regions of the nonvolatile storage element perform multiple functions: they serve as normal transistor control terminals and simultaneously generate the bias voltage needed for current stabilization. This multi-functionality achieves current stability without adding separate bias generation circuits
Solution Approach 2:
The patent merges the bias generation function with the existing control gate and source region structure of the nonvolatile storage element. By combining these functions into a single integrated approach, the circuit achieves stable current output without increasing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration suppresses circuit size increase and achieves highly accurate, stable current output despite manufacturing variations and temperature changes, eliminating the need for correction circuits and reducing consumption current.
Implementation Method 1
a nonvolatile storage element having a control gate region and a source region and operating as a field effect transistor
Data Source
AI summary
The object of the present invention is to provide a current source which is capable of suppressing an increase in circuit size and by which a highly accurate constant current extremely stable to manufacturing variations or temperature fluctuations can be obtained. A current source circuit is provided with a nonvolatile storage element having a control gate region and a source region and operating as a field-effect transistor, and is configured to output a current in a state where a bias is applied between the control gate region and the source region.