Non-volatile Memory Device with Vertical Stacked Layers and Bypass Circuit

The patent transitions from planar memory architecture to a three-dimensional stacked architecture where memory cell arrays are vertically stacked above peripheral circuits. This vertical stacking enables increased storage capacity by utilizing the third dimension (height) rather than merely reducing cell size in the planar dimension, thereby avoiding the complexity and manufacturing precision issues associated with smaller lateral dimensions.

The memory device is segmented into distinct functional layers: peripheral circuits in the lower semiconductor layer and memory cell arrays in the upper semiconductor layer. This segmentation allows independent optimization of each layer and enables the memory arrays to be stacked vertically above the peripheral circuits, increasing storage capacity without proportionally increasing overall device complexity.

The patent reduces lateral wiring footprint by moving wiring and interconnect structures to the vertical dimension. Bit lines extend vertically through the stacked structure, connecting memory cell arrays at different heights to peripheral circuits in the lower layer. This vertical interconnection approach significantly reduces the lateral area required for wiring patterns while avoiding the need for extremely fine lateral feature sizes that would demand higher manufacturing precision.

The bit lines serve multiple functions: they act as data transfer conduits between memory blocks, provide word line control signals, and enable read/write operations across vertically stacked memory cell arrays. This multi-functionality reduces the number of separate wiring structures needed, thereby reducing overall wiring footprint without requiring proportionally smaller individual wire dimensions.

The patent achieves high component integration density by stacking memory cell arrays vertically above peripheral circuits in multiple layers. This vertical integration allows multiple memory blocks and peripheral circuit blocks to coexist in a compact lateral footprint by utilizing the vertical dimension, thereby reducing overall device size while maintaining manageable complexity through clear layer separation.

The device is divided into discrete functional blocks (memory blocks and peripheral circuit blocks) that are independently designed and then stacked vertically. Each block can be independently optimized and manufactured, and the modular stacked architecture allows systematic scaling without proportionally increasing overall device complexity.

The patent provides electrical isolation between adjacent memory cell arrays by introducing separation regions that extend vertically through the stacked structure. Rather than requiring large lateral spacing between arrays, the vertical extension of separation regions enables effective electrical isolation while minimizing lateral area consumption, as the isolation function is achieved in the vertical dimension.

Separation regions are strategically positioned only where electrical isolation is required between adjacent memory groups, rather than uniformly across the entire device. This localized approach to isolation provides necessary reliability benefits while minimizing the total area consumed by separation structures.