Nonvolatile Memory Switching Between Reference Current and Complementary Reading Systems
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Solution Overview
Problem
Existing semiconductor devices lack the ability to freely adjust the memory size of data and code areas, as the choice between reference current and complementary reading systems is determined by hardware, limiting user flexibility.
Innovation Solution
A semiconductor device that can switch between reference current and complementary reading systems, allowing for flexible adjustment of memory sizes in both data and code areas by incorporating a nonvolatile memory module with a hierarchy sense amplifier band and driver circuits that enable switching between the two systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the reference current reading system is employed, then the read speed is fast and storage capacity is increased, but the rewritable count becomes small
Solution Approach 1:
The memory is divided into two distinct areas: a code area that uses the reference current reading system for fast read operations, and a data area that uses the complementary reading system for high rewrite durability. This segmentation allows each area to utilize the reading system best suited for its specific requirements.
Solution Approach 2:
Different reading systems are applied to different regions of the memory based on local requirements. The code area employs reference current reading for speed-critical operations, while the data area employs complementary reading for durability-critical operations, optimizing overall system performance.
2Reliability
If the complementary reading system is employed, then the rewritable count is increased and read current is reduced, but the storage capacity decreases and memory size increases
Solution Approach 1:
The memory is divided into two distinct areas: a code area that uses the reference current reading system for fast read operations, and a data area that uses the complementary reading system for high rewrite durability. This segmentation allows each area to utilize the reading system best suited for its specific requirements.
Solution Approach 2:
Different reading systems are applied to different regions of the memory based on local requirements. The code area employs reference current reading for speed-critical operations, while the data area employs complementary reading for durability-critical operations, optimizing overall system performance.
3Device complexity
If the reading system is determined by hardware, then the system configuration is fixed, but the user cannot freely adjust the memory size of data area and code area
Solution Approach 1:
The system transitions from a static, hardware-fixed configuration to a dynamic, software-configurable system. Users can programmatically adjust the boundaries between the code area and data area, allowing flexible allocation of memory resources based on different application requirements without changing the physical hardware structure.
Data Source
AI summary
The present invention provides a semiconductor device including a nonvolatile memory of which the memory size of a data area and the memory size of a code area can be freely changed. The semiconductor device according to one embodiment includes a nonvolatile memory which can switch between a reference current reading system which performs data read by comparing a current flowing through a first memory cell as a read target and the reference current and a complementary reading system which performs data read by comparing currents flowing through a first memory cell and a second memory cell storing complementary data, as a read target.