Nonvolatile Memory Controller Common Write Operation
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Solution Overview
Problem
Highly integrated semiconductor storage devices face reliability issues due to increased manufacturing complexity, which affects the consistency and efficiency of write operations across multiple pages.
Innovation Solution
A storage device with a controller that performs a common write operation on multiple pages by detecting a common data group and applying it simultaneously, followed by individual write operations on each page, using a program loop with adjustable voltages to optimize data distribution and reduce stress on memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a common write operation is performed on multiple pages simultaneously, then write operation efficiency is improved, but write accuracy and reliability may deteriorate due to increased complexity in managing multiple data groups
Solution Approach 1:
The write operation is divided into two distinct phases: a common write operation that handles shared data across multiple pages, and individual write operations that handle page-specific data. This segmentation allows the system to maintain high throughput through parallel common writes while ensuring accuracy through subsequent individual writes that can be verified and corrected independently.
Solution Approach 2:
The common write operation is performed as a preliminary action before individual write operations. By first writing the common data group to all relevant pages simultaneously, the system prepares the baseline data structure efficiently, then proceeds with individual page writes to complete the operation. This preliminary action reduces overall write time while maintaining data integrity.
2Ease of manufacture
If high degree of integration is implemented to reduce manufacturing cost, then manufacturing cost decreases, but device reliability deteriorates due to increased complexity
Solution Approach 1:
The common write operation mechanism serves multiple functions: it efficiently writes shared data across multiple pages simultaneously, reduces overall write time, and maintains data consistency across pages. This multi-functional approach allows the storage device to achieve high integration benefits without proportionally increasing complexity, as the same write mechanism handles both common and individual write operations.
Solution Approach 2:
The system dynamically adjusts write operation parameters by switching between common write mode (for shared data) and individual write mode (for page-specific data). This parameter change strategy allows the device to optimize performance and reliability based on the specific write scenario, maintaining high integration benefits while managing complexity through adaptive operation modes.
3Speed
If program voltage is increased to improve write speed, then write operation speed increases, but stress on memory cells increases reducing reliability
Solution Approach 1:
The common write operation applies program voltage to multiple pages simultaneously for speed, but the subsequent individual write operations apply targeted voltage only where needed. This partial action approach ensures that not all memory cells undergo high-stress programming at once, reducing cumulative stress while maintaining overall write speed through the efficient common write phase.
Solution Approach 2:
The write process uses periodic action by alternating between common write operations (applying program voltage to multiple pages) and individual write operations (applying voltage to specific pages). This periodic pattern allows memory cells to experience high voltage in controlled intervals rather than continuously, reducing cumulative stress while maintaining write speed through efficient periodic programming cycles.
Data Source
AI summary
A storage device includes a nonvolatile memory device including a plurality of memory cells, the memory cells divided into a plurality of pages, and a controller configured to control the nonvolatile memory device. The storage device is configured to collect two or more write data groups to be written to two or more pages, to simultaneously perform a common write operation with the two or more pages based on the two or more write data groups, and to sequentially perform an individual write operation with each of the two or more pages based on the two or more write data groups.