Nonvolatile Memory Initialization via Dynamic Sensing Schemes
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Solution Overview
Problem
Existing nonvolatile memory devices face inefficiencies in the initialization process, particularly in sensing and verifying setting data, which can lead to prolonged boot times and increased power consumption.
Innovation Solution
The proposed solution involves a nonvolatile memory device with a memory cell array that stores first and second setting data, a page buffer circuit for data storage, and a control logic circuit that controls sensing operations. The control logic circuit performs first sensing of the first setting data using a first sensing scheme, dumps it down, and then performs second sensing of the second setting data using a second sensing scheme, different from the first, based on the dumped-down first setting data.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single sensing scheme is used for all setting data, then the sensing process is simple, but the initialization time is prolonged and power consumption increases
Solution Approach 1:
The patent applies dynamics by switching between different sensing schemes (first sensing scheme and second sensing scheme) based on the specific requirements of each setting data. The control logic circuit dynamically selects the appropriate sensing scheme for each mat, optimizing the initialization process speed while managing complexity through conditional control rather than a fixed complex system.
Solution Approach 2:
The patent changes the sensing parameters (sensing scheme) based on the data location and requirements. By varying the sensing parameters for different mats and data types, the system achieves faster initialization without requiring a completely complex sensing control architecture, thus resolving the contradiction between productivity and device complexity.
2Loss of time
If all setting data is sensed using the same sensing scheme, then the control logic is simple, but the time required for initialization increases
Solution Approach 1:
The patent segments the sensing operation into different types (first sensing scheme and second sensing scheme) based on the specific requirements of different setting data located in different mats. This segmentation allows each segment to be optimized independently, reducing overall boot time without requiring the entire sensing system to be overly complex.
Solution Approach 2:
The control logic circuit performs preliminary determination of which sensing scheme to use based on the data location and requirements before actually performing the sensing operation. This preliminary action optimizes the sensing process and reduces boot time while keeping the control logic manageable through pre-established decision rules.
3Productivity
If multiple sensing schemes are used for different setting data, then the initialization efficiency improves, but the control logic complexity increases
Solution Approach 1:
The patent applies local quality by tailoring the sensing scheme to the specific requirements of different setting data located in different mats. Each mat or data type receives the appropriate sensing treatment locally, improving overall initialization efficiency. The control logic complexity is managed by applying different qualities only where needed rather than throughout the entire system.
Solution Approach 2:
The patent changes sensing parameters locally for different data types and locations. By adjusting the sensing scheme parameter based on local requirements (different mats, different data), the system achieves high initialization efficiency without requiring the entire control logic to be overly complex, as only the relevant portions need different parameters.
Data Source
AI summary
A nonvolatile memory device includes a memory cell array configured to store first and second setting data, a page buffer circuit configured to store data of the memory cell array, and a control logic circuit. The control logic circuit is configured to control a sensing operation based on setting data stored in a setting buffer, perform first sensing of the first setting data stored in the memory cell array in a first sensing scheme, and store the sensed first setting data in the page buffer circuit, dump down the first setting data stored in the page buffer circuit into the setting buffer, and perform second sensing of the second setting data stored in the memory cell array in a second sensing scheme based on the first setting data dumped down into the setting buffer, and store the sensed second setting data in the page buffer circuit.


