Nonvolatile Memory High Voltage Generator Pumping Clock Control
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Solution Overview
Problem
Nonvolatile semiconductor memory devices require high voltages for writing operations, but existing high voltage generators are inefficient in generating and managing these voltages, leading to suboptimal performance and power consumption during programming operations.
Innovation Solution
A nonvolatile memory device with a high voltage generator that boosts input voltage using a pumping clock, a high voltage detector with variable resistances to adjust programming current, and control logic to adjust pumping clock frequency and current driving capability based on detection signals, ensuring the high voltage reaches a target level efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high voltage generator is used to generate high voltage for programming operations, then the memory device can perform writing operations, but the peak operating current increases and programming efficiency decreases
Solution Approach 1:
The patent applies dynamics by making the pumping clock frequency adjustable rather than fixed. The control logic dynamically changes the pumping clock frequency based on detection signals from the high voltage detector, allowing the system to optimize between generating sufficient high voltage and minimizing peak operating current. This resolves the contradiction by enabling the high voltage generator to adapt its operation to actual programming needs.
Solution Approach 2:
The patent implements feedback through the high voltage detector that monitors the generated high voltage and provides detection signals to the control logic. This feedback loop allows the system to adjust the pumping clock frequency based on actual voltage levels, preventing excessive current consumption while ensuring the target voltage is reached, thereby improving programming efficiency without sacrificing reliability.
2Speed
If the pumping clock frequency is increased to generate high voltage faster, then the high voltage reaches target level quicker, but the peak operating current increases
Solution Approach 1:
The system dynamically adjusts the pumping clock frequency based on real-time feedback from the high voltage detector. Instead of operating at a fixed high frequency that always consumes peak current, the frequency is optimized to reach the target voltage level efficiently, reducing unnecessary current consumption after the voltage threshold is achieved.
Solution Approach 2:
The patent changes the operating parameter (pumping clock frequency) based on the detection signal. When the high voltage reaches the target level, the control logic modifies the frequency parameter to reduce peak operating current, thus achieving a balance between voltage generation speed and energy consumption.
3Productivity
If the programming current is increased to improve programming speed, then the programming operation completes faster, but the power consumption increases
Solution Approach 1:
The patent applies partial action by providing just enough programming current to complete the programming operation successfully, rather than continuously applying maximum current. The control logic adjusts the programming current based on detection signals, stopping or reducing current when the high voltage threshold is reached, thus achieving programming speed without excessive power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the programming efficiency and power management of nonvolatile memory devices by precisely controlling the high voltage and current driving capability, reducing peak operating currents and improving programming characteristics.
Implementation Method 1
a high voltage generator to generate the high voltage by boosting an input voltage based on a pumping clock
Implementation Method 2
a programming current controller to adjust a programming current flowing through each of selected memory cells
Data Source
AI summary
A nonvolatile memory device includes a memory cell array including a plurality of memory cells that are programmed based on a high voltage, a high voltage generator to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator to generate the pumping clock, a high voltage detector to generate a detection signal by comparing an adjustment voltage with a reference voltage, a programming current controller to adjust a programming current flowing through each of selected memory cells of the plurality of memory cells; and a control logic to adjust a frequency of the pumping clock and a current driving capability of the programming current based on the detection signal during a programming period with respect to the selected memory cells. The detection signal includes information indicating whether the high voltage reaches to a target voltage.