Non-volatile Memory Read Circuit with Current Amplification
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Solution Overview
Problem
Conventional non-volatile memory systems face challenges in accurately judging the storage state of memory cells during read operations at reduced read voltages, leading to potential misjudgment due to low read currents.
Innovation Solution
A non-volatile memory design incorporating a memory cell array, an amplifying circuit with sensing elements, and a multiplexer that amplifies the read current from memory cells, allowing accurate state judgment even at lower read voltages, and optionally includes a leakage current cancellation circuit to eliminate interference from unselected memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If read voltage is reduced to minimize power consumption, then energy efficiency is improved, but read current becomes too low for accurate state judgment
Solution Approach 1:
A sensing element is introduced as an intermediary between the memory cell and the judging circuit. The sensing element converts the small read current from the memory cell into a larger sensing current that can be accurately measured, enabling low-voltage reads without sacrificing measurement precision
Solution Approach 2:
The patent changes the current parameter through the sensing element, which generates a sensing current proportional to the read current but at a higher magnitude. This parameter transformation allows the system to operate at low read voltages while maintaining sufficient signal levels for accurate state determination
2Device complexity
If conventional read circuitry is used without amplification, then device complexity is reduced, but misjudgment occurs due to low read currents
Solution Approach 1:
The sensing element acts as a mediator that bridges the gap between the low-current memory cell output and the high-current requirement of the judging circuit, providing current amplification while maintaining a relatively simple overall circuit architecture
Solution Approach 2:
The sensing element provides a feedback mechanism where the read current from the memory cell is converted into a proportional sensing current that reflects the storage state, enabling reliable state determination even at low read voltages through current mirroring or amplification
Data Source
AI summary
A non-volatile memory includes a memory cell array, an amplifying circuit and a first multiplexer. The memory cell array includes m×n memory cells. The memory cell array is connected with a control line, m word lines and n local bit lines, wherein m and n are positive integers. The amplifying circuit includes n sensing elements. The n sensing elements are respectively connected between the n local bit lines and n read bit lines. The first multiplexer is connected with the n local bit lines and the n read bit lines. According to a first select signal, the first multiplexer selects one of the n local bit lines to be connected with a first main bit line and selects one of the n read bit lines to be connected with a first main read bit line.