Nonvolatile Memory Reference Cell Array for Multi-Level Data Detection
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Solution Overview
Problem
Existing nonvolatile memory devices using resistive memory cells face challenges in accurately reading and writing multi-level data due to the need for multiple reference currents or voltages, which complicates the detection of resistance distributions and data storage.
Innovation Solution
A nonvolatile memory device with a reference resistance setting unit that selects a subset or all of the column and row lines to set a reference resistance value, allowing for accurate data detection by comparing the resistance values of memory cells in the normal cell array with reference resistance values generated from the reference cell array.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple reference currents or voltages are used to accurately detect multi-level data, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The memory cell array is divided into multiple sub-arrays, with dedicated reference cells allocated to each sub-array. This segmentation allows each reference cell to serve a specific sub-array, simplifying the overall reference cell configuration while maintaining the capability to accurately detect multi-level data across the entire memory array.
2Adaptability or versatility
If reference cells are kept changing to generate reference currents for reading data, then adaptability is improved, but reliability deteriorates due to instability in resistance status
Solution Approach 1:
Reference cells are pre-configured with specific resistance values during manufacturing or initialization. These pre-set reference cells maintain stable resistance status and are selected based on the read operation requirements, rather than dynamically changing reference cells. This preliminary configuration ensures both adaptability for different read operations and reliability through stable resistance values.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the accuracy of read operations by providing a consistent reference resistance value, reducing mismatch between read and reference currents/voltages and improving the reliability of data storage in multi-level cells.
Implementation Method 1
The resistive memory device includes a memory cell made of variable resistive material, where the memory cells variable resistance depends on the amount of current running through the material.
Implementation Method 2
a reference resistance setting unit configured to enable a subset or all of the column lines and row line to set a reference resistance value
Data Source
AI summary
Provided is a nonvolatile memory device including a resistive memory cell and semiconductor system using the same that is capable of setting the reference resistance value using resistance values of a plurality of memory cells. The nonvolatile memory device comprises one or more column lines, two or more row lines, a plurality of memory cells configured to be connected to the column lines and each of the row lines, and a reference resistance setting unit configured to enable a subset or all of the column lines and row lines and to set a reference resistance value.