Nonvolatile Memory Cell With Shared Gate Structure
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Solution Overview
Problem
Conventional nonvolatile memory cell manufacturing processes are costly and complex, with additional layers increasing production time and reducing yields, while existing single poly process methods lack efficient charge storage and control gate layers.
Innovation Solution
A semiconductor component comprising a nonvolatile memory cell with a zero-delay self-aligned tunneling-enhanced capacitor and a state transistor, where the capacitor and transistor share a common gate, reducing the need for separate charge storage and control gate layers, and utilizing a simplified manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional nonvolatile memory cell manufacturing processes are used with separate charge storage and control gate layers, then the memory cell functionality is achieved, but the manufacturing cost increases and production time increases
Solution Approach 1:
The patent combines the charge storage layer and control gate layer into a single integrated structure. The control gate is formed directly over the charge storage layer using the same polysilicon material and deposition process, eliminating the need for separate layer fabrication and reducing manufacturing steps while maintaining the functional separation of charge storage and control operations
Solution Approach 2:
The single polysilicon layer serves dual functions: as the charge storage layer during memory operations and as the control gate layer. This multi-functional approach allows the same material layer to perform both charge retention and gate control functions, simplifying the overall device structure and manufacturing process
2Reliability
If additional layers are added to achieve memory cell functionality, then the device performance is improved, but the manufacturing yield decreases
Solution Approach 1:
By merging the charge storage and control gate functions into a single polysilicon layer, the patent reduces the number of deposition and patterning steps. This consolidation minimizes the cumulative effect of process variations and defects across multiple steps, thereby improving manufacturing yield while maintaining device performance
3Reliability
If separate charge storage and control gate layers are used, then the memory operation is reliable, but the manufacturing cost increases
Solution Approach 1:
The single polysilicon layer is designed to perform both charge storage and control gate functions. During memory operations, the layer maintains reliable charge retention while the control gate functionality is achieved through appropriate biasing and device结构设计, all while reducing material costs and simplifying the manufacturing bill of materials
4Reliability
If conventional multi-layer manufacturing process is used, then the memory cell structure is achieved, but the production time increases
Solution Approach 1:
The patent merges multiple fabrication steps into fewer operations. Specifically, the charge storage layer and control gate layer are formed in a single polysilicon deposition and patterning sequence, eliminating intermediate steps such as separate deposition, etching, and alignment operations, thereby significantly reducing production time while maintaining structural integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances manufacturing efficiency, reduces production costs, and improves device reliability by eliminating the need for additional layers, thereby simplifying the manufacturing process and increasing yields.
Implementation Method 1
zero-delay self-aligned tunneling-enhanced capacitor
Data Source
AI summary
A memory device includes a capacitor, a tunneling-enhanced device, and a transistor. In accordance with an embodiment, capacitor has first and second electrodes wherein the first electrode of the capacitor serves as a control gate of the memory device. The tunneling-enhanced device has a first electrode and a second electrode, wherein the first electrode of the second capacitor serves as an erase gate of the memory device and the second electrode of the tunneling-enhanced device is coupled to the second electrode of the capacitor to form a floating gate. The transistor has a control electrode and a pair of current carrying electrodes, wherein the control electrode of the transistor is directly coupled to the floating gate. In accordance with another embodiment, a method for manufacturing the memory device includes a method for manufacturing the memory device.