Nonvolatile Memory Element Side Wall Protective Layer Leak Path Prevention
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Solution Overview
Problem
Conventional nonvolatile memory elements face issues with the formation of leak paths during line formation, leading to insufficient breakdown voltage and reduced yield due to direct connection of the upper electrode and upper layer line without a plug, resulting in unstable resistance changes.
Innovation Solution
A nonvolatile memory element configuration that includes a first and second electrode with a variable resistance layer made of oxygen-deficient transition metal oxide, a plug connecting the electrodes, and a side wall protective layer with insulating and oxygen barrier properties to prevent leak paths, ensuring effective breakdown voltage application and increased yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the upper electrode and upper layer line are directly connected without a plug, then the device complexity is reduced, but leak paths are formed leading to insufficient breakdown voltage and reduced yield
Solution Approach 1:
The patent introduces a side wall protective layer as an intermediary component between the variable resistance layer and the upper layer line. This layer prevents direct contact and potential leak paths while allowing the necessary electrical connection to be made through controlled interfaces, thus maintaining reliability without excessive complexity
Solution Approach 2:
The patent segments the connection structure by introducing distinct functional layers: the side wall protective layer separates the variable resistance layer from the upper layer line, while the plug provides a dedicated connection path. This segmentation allows each component to perform its specific function optimally, preventing leak paths while maintaining structural manageability
2Ease of manufacture
If the upper electrode and upper layer line are directly connected without a plug, then the manufacturing process is simplified, but leak paths form causing unstable resistance changes
Solution Approach 1:
The side wall protective layer serves as a mediator that prevents direct contact between the upper layer line and variable resistance layer, eliminating leak paths that would cause unstable resistance changes. This adds a manufacturing step but ensures composition stability
Solution Approach 2:
The side wall protective layer is formed in advance to prevent the formation of leak paths before they can occur during operation. This preliminary protective action ensures stable resistance changes by preventing harmful direct contacts between conductive elements
3Device complexity
If no side wall protective layer is formed, then the manufacturing process is simpler and device structure is less complex, but leak paths are formed resulting in insufficient breakdown voltage
Solution Approach 1:
The side wall protective layer acts as an intermediary barrier that prevents direct contact between conductive elements, ensuring that the full breakdown voltage is applied across the variable resistance layer without leakage. This maintains the necessary electrical stress for proper operation
Solution Approach 2:
The patent segments the electrical path by introducing the side wall protective layer, which forces the electrical field to concentrate properly across the variable resistance layer. This segmentation ensures adequate breakdown voltage is achieved by preventing alternative leakage paths
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents leak path formation, stabilizes resistance changes, and enhances the reliability and yield of the nonvolatile memory device by ensuring sufficient breakdown voltage is applied to the variable resistance layer.
Implementation Method 1
an oxidation reaction or a reduction reaction selectively occurs in the vicinity of the interface between the upper electrode 67 and the second variable resistance layer 66y
Implementation Method 2
an oxidation reaction or a reduction reaction selectively occurs in the vicinity of the interface between the upper electrode 67 and the second variable resistance layer 66y
Implementation Method 3
a side wall protective layer 115 having an insulating property and an oxygen barrier property
Data Source
AI summary
A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.