Solid-State Devices TRIZ Cases

Zigzag via plugs block light propagation to the optical black region, stabilizing reference signals against external light interference.

A multiple gate transistor uses placeholder structures to define drain and source areas, enabling fin patterning without epitaxial growth.

A marker-guided recess formation aligns write and erase regions to improve data retention while preventing off-leakage current increases.

Asymmetric sloped sidewalls confine carriers to flat regions, reducing parasitic hole leakage at etch interfaces while maintaining manufacturing simplicity.

A merged P-i-N Schottky diode uses spaced shallow diffusion stripes to absorb reverse avalanche energy.

Segmented ovonic threshold switch circuits reduce parasitic capacitance and protect integrated circuits from electrostatic damage.

Insulating nanoparticles reduce phase-change memory contact area, lowering RESET current and power consumption.

Segmenting the capping layer into distinct regions resolves high contact resistance caused by seams, enabling reliable metal wiring integration.

A lighting apparatus using an OLED with a phosphorescent light emitting layer having a high degree of horizontal orientation adjacent to the cathode.

A power semiconductor termination structure uses a trench filled with an insulating layer and metal to reduce lateral width.

Pillar bottom electrode formation via conformal deposition and anisotropic etching for phase change memory devices.

A partition wall structure with varying heights and lyophilic coatings maintains ink continuity across pixel regions.

A semiconductor light emitting device uses a barrier layer between the transparent conducting and metal reflecting layers.

Extension lines crossing second signal lines prevent short circuits and leakage currents during cutting processes.

Leveling a conductive layer over chip bumps eliminates polishing steps, reducing manufacturing complexity.

Selective epitaxial growth forms thick film regions on an SOI substrate alongside thin film areas for optimized element integration.

Doped dielectric layers disrupt potential well distribution to reduce transient polarization, ensuring retention time independence from prior operations.

Variable width connection layers equalize electrical potential across light emitting cells.

A lateral photo detector structure uses a dislocation trapping region to enhance epitaxy growth and reduce defects in image sensor arrays.

A vertical GaN-based LED employs a Ga-face AlGaN layer to reduce contact resistance caused by the piezoelectric effect at the n-electrode interface.

Blocking layers of carbon or germanium prevent conductivity-type impurity diffusion, reducing leakage current and improving electrical characteristics.

Tether structures enable laser lift-off separation of semiconductor bodies, reducing production complexity and cost compared to standard die bonding.

An insulating organic compensator fills recesses in the insulating sub-layer of an array substrate to create a flat surface.

A semiconductor memory device shares a common source line between adjacent active areas to reduce array footprint.

Vertical RAM selectors employ diodes to block parasitic currents through non-selected cells, ensuring accurate data retention.

A lamination transfer film creates bridged nanostructures on large glass substrates through molecular migration and sacrificial template removal.

Segmented insulation openings position connection lines on sidewalls to prevent shorting while enabling device bending.

A 3D nonvolatile memory cell uses a barrier layer with high oxygen ionic conductivity to enable reversible resistance switching.

A nitride semiconductor light emitting device uses an insulation film on protrusions to reflect lateral light upward.

Integrating a force sensitive layer with a protrusion and elastic buffer material increases signal amplitude while minimizing added weight.

Segmented source regions linked by elongated conductors reduce voltage drop and enhance operating speed in high-current resistive memory devices.

Stacked gate electrodes penetrate vertical channels to increase integration density while simplifying complex wiring structures.

Violet and ultraviolet LEDs pump multiple phosphor materials to generate green light with high internal quantum efficiency.

A porous bank absorbs excess emitting ink to prevent pile-up, while a dam traps impurities to protect the diode.

Segmenting via formation and cut metal layers reduces mask costs for ROM programming.

A QLED reflective electrode introduces wavelength-specific phase shifts to maximize constructive interference in optical cavities.

A peak luminance control portion adjusts display brightness using compensated average picture levels derived from column line IR variations.

A programmable logic device structure uses non-volatile third-dimensional memory elements to control signal routing and enable dynamic reprogramming.

Asymmetric sub-pixels with shifted columns and black buffer pixels reduce crosstalk while improving horizontal resolution and viewing angles.

Asymmetric yoke geometry extends parallel magnetic field range, maintaining sensing accuracy despite reduced magnet volume and lower manufacturing costs.

A reflective electrode and fine particle layer with matched refractive indices extract light from an organic electroluminescent device.

A light emitting device embeds a semiconductor element within a base section and connects wiring to enhance mechanical strength.

Segmented signal lines distribute electrical load across parallel sub-lines, reducing dark regions and moire phenomena without black matrices.

A magnetic tunnel junction structure employs resonant electron tunneling through quantum well states to enhance electrical conductivity.

An azine first host paired with a carbazole second host improves luminous efficiency by enabling deep HOMO levels for effective TADF mechanism operation.

A nitride semiconductor light extraction surface processed into an uneven shape with multiple oblique angles to enhance light extraction efficiency.

A memory device applies a lower pass voltage to unselected word lines during blind program periods.

Segmented field plate electrode suppresses leak current by preventing parasitic MOS transistor activation in integrated semiconductor devices.

A clay support layer with a layered crystal structure enables direct transfer of thin-film functional members onto flexible substrates.

A silicon nanotube memory cell structure reduces parasitic capacitance through vertical oxide layer separation.

A polymeric decoupling layer protects environmentally sensitive devices during plasma deposition.

A display device design merges sensor electrodes and driving elements through conductive patterns on the sealing material.

A nickel disilicide metal seed layer induces amorphous silicon crystallization into polysilicon.

An OLED emission layer incorporates an exciplex between the host and phosphorescent dopant to prevent deterioration and extend device lifespan.

A circuit board uses differently inclined side surfaces on semiconductor layers and gate electrodes to improve step coverage and fine-processability.

Epitaxial growth forms raised source-drain regions before gate formation to define precise junction boundaries.

A Group IVA nitride layer traps charges at the buried oxide interface to maintain high substrate resistivity.

Third semiconductor region blocks depletion layer spread, reducing unwanted noise components for accurate distance detection.

Radial regions separated by transmissive walls prevent spectral overlap of fluorescent materials, resolving efficiency loss and uneven brightness distribution.

Page buffers supply distinct precharge voltages to bit lines, compensating for distance-related cell current variations that degrade read accuracy.

Dual precharge circuits reduce parasitic RC loads in CMOS image sensors, expanding sense amplifier voltage swing margin for high-speed readout.

Integrating heat dissipation into the backplate structure eliminates copper foam layers, reducing thickness and improving folding performance.

Matched thermal expansion coefficients minimize displacement during thermocompression bonding, resolving alignment precision issues caused by thermal stress.

A nonvolatile memory element uses a side wall protective layer to connect electrodes via a plug, ensuring stable resistance changes.

A charge trapping memory cell uses a metal doped silicon oxide blocking dielectric to confine electrons, resolving erase saturation while maintaining retention.

A light-emitting device places stacks on opposing substrate surfaces connected via series and rectifying structures.

Deuterated host compounds stabilize organic electroluminescent devices through isotopic substitution.

Codeposited mixture layers suppress metal atom aggregation to preserve electrical conductivity and optical characteristics in OLEDs.

Ultrashort pulse laser ablation trims conductive metal layers on metal-ceramic substrates, eliminating separate resistors while preventing isolator damage.

An oxynitride phosphor composition resists temperature quenching in high-load LEDs by incorporating specific metal elements to stabilize crystal structure.

A diffraction pattern layer expands the effective light-emitting area ratio in display devices.

Composite insulating layers stabilize threshold voltage fluctuations while vertical stacking increases integration density.

A diffusion suppressing layer blocks impurity migration to sacrifice layers, ensuring complete etching and stable data retention.

Segmenting the emission layer into two TADF-doped layers distributes recombination across interfaces, preventing deterioration and extending device lifespan.

A pixel structure fabrication method uses a photoresist layer with varying thickness blocks to pattern dielectric and semiconductor regions.

Varied element heights allow selective repair of defective micro-LEDs without damaging normal elements during mass transfer.

A liquid crystal display fabrication method uses three masks to form gate lines, data lines, and electrodes simultaneously.

Carbon ion implantation into silicon fins adjusts threshold voltage, enabling distinct thresholds on the same substrate without degrading electron mobility.

A segmented second electrode with varying alkaline earth element ratios enhances adhesion to the organic light emitting layer.

A silicon carbide semiconductor component isolates bipolar reverse current damage from transistor cells using a diode region with higher emitter efficiency.

Retracting polysilicon edges in a stacked gate electrode prevent short-channel effects and reduce adjacent gate short-circuit risks.

A transparent organic light emitting diode structure uses a thin second lower electrode positioned at the gate level to support dual emission.

A side cover film with a conductive layer protects display components while reducing the bezel area.

Specific organoboron complexes function as matrix materials in OLEDs, resolving efficiency-lifetime trade-offs through tailored molecular structures.

Crossed conductive lines on organic insulating layers enable high transmittance without compromising resolution in segmented display areas.

A single-crystal silicon channel in a semiconductor pillar replaces polysilicon to enable effective diffusion layer formation.

Protective film acts as auxiliary capacitor insulation to boost electric capacity without expanding pixel area.

A three-dimensional conductive wire design with multiple stress cushioning sections reduces thermal expansion stress in LED devices.

Thermal annealing of tunneling oxide layers reduces stress-induced leakage current while maintaining high storage density.

Vertical transistors limit leakage currents in ReRAM arrays, suppressing sneak paths and improving sensing accuracy.

Sacrificial layer absorbs laser energy during lift-off, preventing substrate damage and enabling reuse.

A semiconductor element corrects gain and offset values dynamically within a single integrated circuit chip.

Ion implantation creates controlled damage in RRAM switching layers, eliminating forming voltage variability and ensuring uniform resistance states.

Carbon impurities in the current spreading part balance electron and hole injection, resolving uneven current density that reduces luminous efficacy.

A compensation layer with varying thicknesses modulates cavity lengths in OLED pixel areas to enhance light-emitting efficiency.

Pre-bending cover glass before bonding reduces overall thickness and bending stress, enabling desired curvature for curved OLED hard display panels.

A protective pattern aligns with via holes to expose only common electrode signal lines during etching.

Variable cross-sectional area in the semiconductor layer reduces channel resistance, maintaining cell current across stacked electrode layers.