Solid-State Devices TRIZ Cases

Zigzag via plugs block light propagation to the optical black region, stabilizing reference signals against external light interference.

A multiple gate transistor uses placeholder structures to define drain and source areas, enabling fin patterning without epitaxial growth.

A marker-guided recess formation aligns write and erase regions to improve data retention while preventing off-leakage current increases.

Asymmetric sloped sidewalls confine carriers to flat regions, reducing parasitic hole leakage at etch interfaces while maintaining manufacturing simplicity.

A merged P-i-N Schottky diode uses spaced shallow diffusion stripes to absorb reverse avalanche energy.

Segmented ovonic threshold switch circuits reduce parasitic capacitance and protect integrated circuits from electrostatic damage.

Insulating nanoparticles reduce phase-change memory contact area, lowering RESET current and power consumption.

Segmenting the capping layer into distinct regions resolves high contact resistance caused by seams, enabling reliable metal wiring integration.

A lighting apparatus using an OLED with a phosphorescent light emitting layer having a high degree of horizontal orientation adjacent to the cathode.

A power semiconductor termination structure uses a trench filled with an insulating layer and metal to reduce lateral width.

Pillar bottom electrode formation via conformal deposition and anisotropic etching for phase change memory devices.

A partition wall structure with varying heights and lyophilic coatings maintains ink continuity across pixel regions.

A semiconductor light emitting device uses a barrier layer between the transparent conducting and metal reflecting layers.

Extension lines crossing second signal lines prevent short circuits and leakage currents during cutting processes.

Leveling a conductive layer over chip bumps eliminates polishing steps, reducing manufacturing complexity.

Selective epitaxial growth forms thick film regions on an SOI substrate alongside thin film areas for optimized element integration.

Doped dielectric layers disrupt potential well distribution to reduce transient polarization, ensuring retention time independence from prior operations.

Variable width connection layers equalize electrical potential across light emitting cells.

A lateral photo detector structure uses a dislocation trapping region to enhance epitaxy growth and reduce defects in image sensor arrays.

A vertical GaN-based LED employs a Ga-face AlGaN layer to reduce contact resistance caused by the piezoelectric effect at the n-electrode interface.

Blocking layers of carbon or germanium prevent conductivity-type impurity diffusion, reducing leakage current and improving electrical characteristics.

Tether structures enable laser lift-off separation of semiconductor bodies, reducing production complexity and cost compared to standard die bonding.

An insulating organic compensator fills recesses in the insulating sub-layer of an array substrate to create a flat surface.

A semiconductor memory device shares a common source line between adjacent active areas to reduce array footprint.

Vertical RAM selectors employ diodes to block parasitic currents through non-selected cells, ensuring accurate data retention.

A lamination transfer film creates bridged nanostructures on large glass substrates through molecular migration and sacrificial template removal.

Segmented insulation openings position connection lines on sidewalls to prevent shorting while enabling device bending.

A 3D nonvolatile memory cell uses a barrier layer with high oxygen ionic conductivity to enable reversible resistance switching.

A nitride semiconductor light emitting device uses an insulation film on protrusions to reflect lateral light upward.

Integrating a force sensitive layer with a protrusion and elastic buffer material increases signal amplitude while minimizing added weight.

Segmented source regions linked by elongated conductors reduce voltage drop and enhance operating speed in high-current resistive memory devices.

Stacked gate electrodes penetrate vertical channels to increase integration density while simplifying complex wiring structures.

Violet and ultraviolet LEDs pump multiple phosphor materials to generate green light with high internal quantum efficiency.

A porous bank absorbs excess emitting ink to prevent pile-up, while a dam traps impurities to protect the diode.

Segmenting via formation and cut metal layers reduces mask costs for ROM programming.

A QLED reflective electrode introduces wavelength-specific phase shifts to maximize constructive interference in optical cavities.

A peak luminance control portion adjusts display brightness using compensated average picture levels derived from column line IR variations.

A programmable logic device structure uses non-volatile third-dimensional memory elements to control signal routing and enable dynamic reprogramming.

Asymmetric sub-pixels with shifted columns and black buffer pixels reduce crosstalk while improving horizontal resolution and viewing angles.

Asymmetric yoke geometry extends parallel magnetic field range, maintaining sensing accuracy despite reduced magnet volume and lower manufacturing costs.

A reflective electrode and fine particle layer with matched refractive indices extract light from an organic electroluminescent device.

A light emitting device embeds a semiconductor element within a base section and connects wiring to enhance mechanical strength.

Segmented signal lines distribute electrical load across parallel sub-lines, reducing dark regions and moire phenomena without black matrices.

A magnetic tunnel junction structure employs resonant electron tunneling through quantum well states to enhance electrical conductivity.

An azine first host paired with a carbazole second host improves luminous efficiency by enabling deep HOMO levels for effective TADF mechanism operation.

A nitride semiconductor light extraction surface processed into an uneven shape with multiple oblique angles to enhance light extraction efficiency.

A memory device applies a lower pass voltage to unselected word lines during blind program periods.

Segmented field plate electrode suppresses leak current by preventing parasitic MOS transistor activation in integrated semiconductor devices.

A clay support layer with a layered crystal structure enables direct transfer of thin-film functional members onto flexible substrates.