Non-Volatile Memory Programming via Simultaneous Write Current
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing non-volatile memory devices require prolonged programming times due to the sequential programming of memory cells, which reduces operation speed and efficiency.
Innovation Solution
A method for programming non-volatile memory devices that generates a simultaneous write current based on program addresses, enabling bit line write cells to program multiple memory cells coupled to the same bit line simultaneously, thereby reducing programming time and increasing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If memory cells are programmed sequentially, then programming accuracy can be maintained, but programming time increases significantly
Solution Approach 1:
The patent merges multiple sequential programming operations into a single simultaneous programming operation. By generating a simultaneous write current that can be applied to multiple memory cells at once, the system combines what would otherwise be separate programming steps into one concurrent operation, directly reducing programming time while maintaining accuracy through controlled current distribution
Solution Approach 2:
The patent introduces dynamic current generation based on resistance values. The system calculates resistance values of memory cells and dynamically adjusts the write current accordingly, allowing the programming system to adapt to varying cell conditions in real-time. This dynamic approach enables simultaneous programming while maintaining accuracy through personalized current control for each cell
2Ease of operation
If a single write current is used for multiple memory cells, then programming operation is simplified, but programming accuracy deteriorates due to resistance variations
Solution Approach 1:
The patent applies local quality by tailoring the write current to individual memory cell characteristics. Instead of using a uniform current for all cells, the system calculates resistance values for each cell and generates customized write currents based on their specific resistance properties. This ensures that each cell receives the appropriate current magnitude for accurate programming while maintaining a unified simultaneous programming approach
Solution Approach 2:
The patent changes the parameter of write current magnitude based on measured resistance values. The system dynamically adjusts current parameters according to the resistance characteristics of each memory cell, transforming a static single-current approach into a dynamic multi-parameter system. This parameter adaptation maintains programming accuracy across cells with varying resistance while preserving operational simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces programming time by allowing multiple memory cells to be programmed concurrently, enhancing the operational speed and accuracy of the non-volatile memory device.
Implementation Method 1
calculating resistance values of bit line write cells based on a program address... generating a simultaneous write current for programming the bit line write cells based on the calculated resistance values
Data Source
AI summary
A non-volatile memory device and a method for programming the same are disclosed. The method for programming the non-volatile memory device includes generating a simultaneous write current based on a program address in such a manner that bit line write cells corresponding to memory cells coupled to the same bit line from among memory cells to be programmed can be simultaneously programmed, and providing the simultaneous write current to the bit line write cells by simultaneously enabling the bit line write cells.