Notch Packaging Layer with Silicon Nitride for Display Panel Protection
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Solution Overview
Problem
Oxide TFT panels are sensitive to water vapor and hydrogen ions, leading to malfunction and poor display performance due to the diffusion of free hydrogen ions from silicon nitride insulating layers and the inability of silicon oxide layers to effectively block water and oxygen.
Innovation Solution
A display panel design featuring a notch in the non-display area of the array substrate filled with silicon nitride, which prevents the diffusion of hydrogen ions and enhances water vapor blocking, combined with a layered structure of silicon nitride, silicon oxide, and silicon oxynitride for improved insulation and protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SiNx is used as an insulating layer for TFT, then water vapor and ion blocking ability is improved, but free hydrogen ions diffuse to TFT devices causing malfunction and yield rate drops
Solution Approach 1:
The insulating layer is segmented into multiple distinct layers: a SiNx layer (first insulating layer) for blocking water vapor and ions, and a SiOx layer (second insulating layer) for preventing hydrogen ion diffusion. Each layer performs its specific function independently, resolving the contradiction between blocking ability and hydrogen ion harm.
Solution Approach 2:
The patent uses a composite structure combining SiNx and SiOx materials in separate layers. SiNx provides superior water vapor and ion blocking, while SiOx provides hydrogen ion barrier properties. This composite approach leverages the strengths of each material to eliminate their individual weaknesses.
2Object-generated harmful factors
If SiNO or SiOx is used as an insulating layer for TFT devices, then hydrogen ion diffusion is reduced, but water vapor blocking ability deteriorates due to porous and hydrophilic membrane structure
Solution Approach 1:
The functions of hydrogen ion barrier and water vapor barrier are segmented into different layers. SiOx layer handles hydrogen ion protection, while SiNx layer handles water vapor blocking. This segmentation allows each material to optimize its specific function without compromise.
Solution Approach 2:
The composite structure combines SiOx (for hydrogen ion barrier) with SiNx (for water vapor barrier). This composite design allows the porous SiOx to be used without compromising water vapor blocking, as that function is assigned to the dense SiNx layer.
3Device complexity
If SiNx and SiOx are etched at the same time for via-hole etching, then process steps are reduced, but undercuts and etching by-products form due to different etching characteristics
Solution Approach 1:
An intermediary protective layer (such as a hard mask or sacrificial layer) is introduced to enable selective etching. This intermediary allows the etching process to target SiNx and SiOx separately with appropriate etchants, preventing undercut formation while maintaining reasonable process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively blocks water and oxygen ingress, preventing device malfunctions and improving yield rates by isolating the source and drain electrodes from hydrogen ions while maintaining effective insulation against water vapor and ions.
Implementation Method 1
SiNx has better insulation, and its membrane is dense that it has exceptional abilities to block water vapor and free ions such as Na and K
Implementation Method 2
there are many free H+ in SiNx, and they easily diffuse to TFTs devices causing TFT devices to malfunction
Implementation Method 3
silicon oxide cannot block water and oxygen effectively
Data Source
AI summary
The present invention provides a display panel and a manufacturing method thereof. The display panel includes a display area, a non-display area surrounding the display area, and an array substrate disposed in the display area and the non-display area; the array substrate includes a notch disposed in the non-display area of the array substrate and surrounding the display area to form a circle; and a packaging layer filled in the notch, and a material of the packaging layer is silicon nitride.