Novolak Resist Pattern Size Reduction for LCD Manufacturing
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Solution Overview
Problem
In the manufacturing of liquid crystal display devices, existing technologies face challenges in achieving high-resolution patterns with taper shapes due to limitations in exposure wavelength and numerical aperture, which affect pattern accuracy and yield, especially on uneven glass substrates.
Innovation Solution
A method involving the use of a novolak resin resist composition, exposure, development, heating, and subsequent application of a fine pattern forming composition to create a high-defined pattern by reducing the separation size of resist patterns, maintaining a taper shape and enhancing resolution without altering the exposure apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the exposure wavelength is shortened or high NA exposure is used to increase resolution, then the resolution of the resist pattern is improved, but it is difficult to implement in liquid crystal display device manufacturing due to apparatus limitations and throughput requirements
Solution Approach 1:
The patent divides the pattern formation process into multiple stages: first forming a preliminary resist pattern with conventional exposure, then applying a fine pattern forming composition that is cured by heating to create the final high-resolution pattern. This segmentation allows achieving below-resolution-limit patterns without requiring high-NA exposure apparatus.
Solution Approach 2:
The resist pattern is formed first as a preliminary structure, then a fine pattern forming composition is applied and cured to create the final pattern. The preliminary resist pattern serves as a template that guides the formation of the final high-resolution pattern, enabling resolution enhancement without changing the exposure apparatus.
2Manufacturing precision
If high NA exposure is used to improve resolution, then the resolution is enhanced, but the depth of focus decreases making the pattern accuracy sensitive to substrate unevenness
Solution Approach 1:
The process separates resolution enhancement from the exposure step itself. The conventional exposure forms a preliminary pattern with adequate depth of focus, and the subsequent fine pattern forming composition application and curing creates the high-resolution final pattern, thus avoiding the depth of focus problem associated with high-NA exposure.
3Manufacturing precision
If phase shift mask or optical proximity correction techniques are used to form fine patterns, then resolution is improved, but these techniques are ineffective when low NA and wavelength mixture exposure are used
Solution Approach 1:
The patent replaces optical-based resolution enhancement techniques (phase shift mask, OPC) with a chemical-based approach using fine pattern forming composition that is cured by heating. This substitution enables effective fine pattern formation under conventional low-NA, wavelength-mixture exposure conditions used in liquid crystal display manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively forms patterns below the resolution limit with a high size reduction rate and maintains a taper shape, improving pattern accuracy and yield while being economically viable.
Implementation Method 1
a step of subjecting the resist composition layer to exposure; a step of developing the resist composition layer to form a resist pattern
Implementation Method 2
a step of heating the resist pattern and the fine pattern forming composition layer to cure the regions of the fine pattern forming composition layer in the vicinity of the resist pattern and to form an insolubilized layer
Implementation Method 3
a step of heating the fine pattern to deform the fine pattern and to form a high-defined pattern
Data Source
AI summary
[Problem] The present invention provides a method of manufacturing a resist pattern of effectively below the resolution limit, which is suitable for use in the liquid crystal display device manufacturing field. In particular, the present invention provides a method of accurately manufacturing a high-defined pattern of below the resolution limit while maintaining or improving a pattern shape having a taper shape. [Means for Solution]A method of manufacturing a high-defined pattern comprising the following steps of: coating a resist composition comprising a novolak resin having an alkali dissolution rate of 100-3,000 Å on a substrate to form a resist composition layer; subjecting said resist composition layer to exposure; developing said resist composition layer to form a resist pattern; heating said resist pattern; subjecting said resist pattern to flood exposure; coating a fine pattern forming composition on the surface of said resist pattern to form a fine pattern forming composition layer; heating said resist pattern and said fine pattern forming composition layer to cure the regions of said fine pattern forming composition layer in the vicinity of said resist pattern and to form an insolubilized layer; removing uncured regions of said fine pattern forming composition layer to form a fine pattern; and heating said fine pattern.