Non-Volatile Memory Cell Using Volatile Resistive Switching
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Solution Overview
Problem
Current non-volatile memory technologies face challenges in achieving high density, fast switching, and low manufacturing costs while maintaining data reliability, which are addressed by incorporating a volatile resistive switching two-terminal device and a MOS transistor in a non-volatile memory cell.
Innovation Solution
A non-volatile memory cell is fabricated using a volatile resistive switching two-terminal device connected between the gates of n-well and p-well transistors, with a capacitor structure acting as an additional capacitor, allowing for fast switching and reliable data storage through modulation of conductivity based on applied voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional non-volatile memory technologies are used, then data storage reliability is maintained, but manufacturing cost increases and manufacturing complexity increases
Solution Approach 1:
The patent combines a volatile resistive switching device with a MOS transistor to create a hybrid memory cell structure. This merging allows the system to leverage the low-cost, high-density advantages of resistive switching while using the MOS transistor to provide reliable data storage and retention, thereby reducing manufacturing cost without sacrificing data storage reliability.
Solution Approach 2:
The memory cell structure serves multiple functions: the resistive switching device provides fast switching and low-cost fabrication, while the MOS transistor ensures data retention and reliability. This multi-functionality allows a single cell structure to address both cost reduction and reliability maintenance simultaneously.
2Ease of manufacture
If conventional non-volatile memory technologies are used, then data storage is reliable, but switching speed decreases and manufacturing cost increases
Solution Approach 1:
By merging the volatile resistive switching device (which provides fast switching speeds) with the MOS transistor (which ensures reliable data retention), the patent achieves both fast switching and low manufacturing cost in a single hybrid memory cell structure.
3Quantity of substance
If high density memory cells are fabricated, then memory capacity increases, but manufacturing precision requirements increase
Solution Approach 1:
The memory cell is segmented into distinct functional components: the resistive switching device for high-density storage and the MOS transistor for data retention. This segmentation allows each component to be optimized independently, enabling high memory density without proportionally increasing manufacturing precision requirements.
4Speed
If fast switching is achieved using resistive switching devices, then switching speed increases, but device complexity increases
Solution Approach 1:
The patent merges the simple two-terminal resistive switching device with the well-understood MOS transistor structure. This combination achieves fast switching speeds while maintaining relatively low device complexity by leveraging established transistor fabrication processes and the inherent simplicity of resistive switching elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-density, fast-switching non-volatile memory cells with low manufacturing costs, achieving reliable data storage and retention through the use of a volatile resistive switching device and MOS transistor configuration.
Implementation Method 1
a volatile resistive switching two-terminal device connected between the gates of n-well and p-well transistors... fast switching and reliable data storage through modulation of conductivity based on applied voltages
Data Source
AI summary
A circuit operable as a non-volatile memory cell, formed in part from a volatile selection device, is provided. The circuit can be fabricated utilizing Integrated Circuit (IC)-Foundry compatible processes to simplify manufacturing, reduce cost and improve yield. For instance, the circuit can comprise a set of transistors fabricated at least in part with front-end-of-line IC processes, and can comprise the volatile selection device and a set of interconnects fabricated at least in part with back-end-of-line IC processes. In further embodiments, the volatile selection device can be a two-terminal, volatile resistive-switching device connected at one end to a gate of an n-well transistor, and connected at a second end to a gate of a p-well transistor.