Non-volatile Memory Initialization Current Peak Reduction
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Solution Overview
Problem
As the number of non-volatile memory devices in NVMe SSDs and NVMe-oF increases, the consumption current peaks during initialization information read operations due to the generation of high read pass voltages through pumping operations, exceeding allowable limits.
Innovation Solution
A non-volatile memory device that generates a low read pass voltage by dividing the source voltage VDD for unselected word lines during initialization information read operations, eliminating the need for voltage pumping and reducing consumption current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high read pass voltages are generated through pumping operations for initialization information read operations, then read operation reliability is improved, but consumption current peaks increase
Solution Approach 1:
The patent changes the voltage parameter from high read pass voltage (generated by pumping operations) to low read pass voltage (directly from power supply). This parameter change maintains sufficient read operation reliability while dramatically reducing the consumption current peaks that occur during initialization information read operations in NVMe SSDs.
Solution Approach 2:
The patent extracts and eliminates the voltage pumping operation from the initialization information read process. By removing the pumping circuitry and its associated high current consumption, the system achieves stable operation with reduced power requirements while still completing necessary read operations.
2Productivity
If the number of non-volatile memory devices is increased to enhance storage capacity, then productivity is improved, but consumption current peaks during initialization operations increase
Solution Approach 1:
By changing the voltage generation approach from pumping operations to direct power supply connection, the patent enables scaling to multiple memory devices without proportional increases in current peaks. This parameter change allows NVMe SSDs and NVMe-oF systems to expand storage capacity while maintaining stable power consumption characteristics.
3Productivity
If voltage pumping operations are performed for read pass voltage generation, then read operation performance is improved, but device complexity increases
Solution Approach 1:
The patent removes the voltage pumping operation and associated circuitry from the system. This extraction eliminates the complexity of voltage generation circuits while maintaining read operation functionality by using direct power supply connections, thereby simplifying the overall device architecture.
Solution Approach 2:
The patent makes the power supply voltage directly usable for read pass voltage without requiring specialized pumping circuits. This universal approach allows the same power supply to serve multiple functions across different operation modes and device configurations, reducing overall system complexity.
Data Source
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AI summary
In a method of reading initialization information from a non-volatile memory device, when power-up is detected, the non-volatile memory device divides a source voltage to generate a low read pass voltage which is to be provided to unselected word lines in an initialization information read operation. The low read pass voltage is set as at least one voltage between a ground voltage and the source voltage. The non-volatile memory device allows the source voltage not to be pumped in the initialization information read operation, based on the power-up. In the initialization information read operation, the non-volatile memory device provides the low read pass voltage to the unselected word lines and provides a read voltage to a selected word line to read initialization information stored in the memory cells.