Non-volatile Memory Voltage Switching Circuit Abortion Protection
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Solution Overview
Problem
Non-volatile memory devices require high voltage switching circuits for program and erase operations, which can lead to potential damage to low voltage transistors due to sudden voltage changes during abortion of these operations, as existing technologies lack effective mechanisms to manage voltage transitions and protect these transistors.
Innovation Solution
A memory device with a voltage switching circuit that includes both high and low voltage switching circuits, along with a control circuit that generates discharge signals to manage voltage transitions, ensuring the high voltage switching circuit is discharged when an abortion occurs, thereby protecting the low voltage transistors by preventing instantaneous voltage increases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high voltage switching circuit is used for program and erase operations, then the memory device can perform high voltage operations, but the low voltage transistors may be damaged due to sudden voltage changes during abortion of these operations
Solution Approach 1:
The patent applies preliminary anti-action by implementing a discharge circuit that proactively discharges the high voltage switching circuit when an abortion condition is detected. This pre-emptive discharge prevents the harmful voltage from damaging the low voltage transistors, rather than waiting for damage to occur and then responding.
Solution Approach 2:
The discharge circuit acts as an intermediary between the high voltage switching circuit and the low voltage switching circuit. It mediates the voltage transition by providing a controlled discharge path, preventing direct exposure of vulnerable low voltage transistors to harmful high voltage conditions during abortion scenarios.
2Reliability
If the high voltage switching circuit is discharged upon abortion detection, then the low voltage transistors are protected from damage, but additional circuit complexity is introduced
Solution Approach 1:
The discharge circuit is designed to serve multiple functions: it discharges the high voltage switching circuit during abortion, provides a controlled voltage transition path, and works seamlessly with both program and erase operations. This multi-functionality reduces the need for separate dedicated circuits for each protection scenario.
Solution Approach 2:
The patent merges the discharge functionality into the existing voltage switching circuit architecture rather than creating entirely separate protection systems. The discharge circuit integrates with the high voltage switching circuit, sharing control signals and physical infrastructure, thereby reducing overall system complexity despite adding protection capabilities.
Data Source
AI summary
A memory device includes a memory cell array, a voltage switching circuit configured to switch a plurality of voltages provided to the memory cell array in response to a switching control signal, a discharge circuit configured to discharge the voltage switching circuit in response to a discharge signal, and a control circuit configured to generate the switching control signal based on a command and a high voltage enable signal received from outside of the memory device. The voltage switching circuit includes a high voltage switching circuit, and a low voltage switching circuit. The control circuit is configured to generate the discharge signal based on the command and an activated high voltage enable signal responsive to detecting external abortion while performing an operation corresponding to the command from among a program operation and an erase operation.