Non-Volatile Memory Blank State Detection via Time Domain Signal Processing

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Solution Overview

Problem

In non-volatile memory (NVM) systems, detecting a blank state after an erase operation is challenging due to unpredictable read results from cell pairs, where both cells are in the erased state, leading to unreliable data decoding without additional time-consuming read operations or increased complexity in the analog domain.

Innovation Solution

Transforming electrical variables of each cell into a time domain and comparing the transformed values of at least two cells, specifically true and complementary cells, to determine if a memory area is in a blank state by identifying consecutive '0' values across multiple cells, thereby distinguishing between valid data and a blank state without additional read operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If additional read operations are performed to detect blank states, then detection reliability is improved, but operational time increases

Engineering Contradiction:
Improveblank state detection reliabilityVSAvoidoperational time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent transforms electrical variables into time domain values before comparison, preparing the data in advance for reliable blank state detection. This preliminary transformation enables accurate detection without requiring additional read operations, thus maintaining speed while improving reliability

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces additional mechanical read operations with a signal processing approach. By transforming electrical variables into time domain and comparing them, the system achieves reliable blank state detection without the need for extra physical read cycles, thereby reducing time loss

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If analog domain operations are increased to detect blank states, then detection accuracy is improved, but device complexity increases

Engineering Contradiction:
Improveblank state detection accuracyVSAvoidanalog domain complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent substitutes complex analog domain operations with time domain signal processing. By transforming electrical variables and performing comparisons in the time domain, the system achieves accurate blank state detection while avoiding increased analog circuit complexity

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the parameter domain from electrical variables to time domain values. This transformation enables accurate blank state detection through time-based comparison rather than complex analog operations, maintaining precision while reducing device complexity

Inventive Principle:
Principle #35Parameter changes

3Reliability

If more memory cells are used per data bit for differential read, then data reliability is improved, but memory area increases

Engineering Contradiction:
Improvedata decoding reliabilityVSAvoidmemory area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent enables the existing memory cells to serve dual purposes: storing data and providing blank state detection information. By transforming and comparing electrical variables from the same cells used for differential read, the system achieves reliable data decoding without requiring additional memory area

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS9633733B2Method, apparatus and device for data processing for determining a predetermined state of a memory
Publication Date: 2017.04.25 INFINEON TECHNOLOGIES AG
  • US9633733B2 patent drawing
  • US9633733B2 patent drawing
  • US9633733B2 patent drawing

AI summary

A method for data processing is suggested including: (i) transforming electrical variables for each cell of a data bit of a memory into a time domain; and (ii) determining a predetermined state by comparing the transformed electrical variables of at least two data bits.