Non-Volatile Memory Erase Block Stability Characterization

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Solution Overview

Problem

Non-volatile memory devices (NVMDs) experience instability and error rates when erase blocks are partially filled, leading to data loss and reduced memory capacity due to the inability to detect and correct errors effectively, especially in recent 20 nanometer flash memory devices.

Innovation Solution

Characterizing NVMDs by identifying stability points within erase blocks through a method of programming, verifying, and recording sequences of contiguous pages to determine instability points, and stabilizing these blocks by writing dummy data until a stability point is reached before erasure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If data is written to NVMDs in parallel to improve write speed, then write latency is reduced, but partially filled erase blocks are created causing data instability and errors

Engineering Contradiction:
Improvewrite speedVSAvoiddata stability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The system performs preliminary actions by characterizing erase blocks before use and stabilizing partially filled blocks before erasure. The controller identifies stability points in advance and ensures complete word lines are filled before initiating erasure operations, preventing instability-related errors.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system implements feedback mechanisms where the controller monitors and tracks the state of erase blocks during parallel writes. When a stability point is detected or a word line becomes partially filled, the controller adjusts write operations accordingly, ensuring reliable data storage while maintaining high write speeds.

Inventive Principle:
Principle #23Feedback

2Quantity of substance

If partially filled erase blocks are erased to maintain memory capacity, then available storage space is preserved, but error rates increase and data loss occurs

Engineering Contradiction:
Improvememory capacityVSAvoiderror rate
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

Before erasing an erase block, the system performs preliminary characterization to identify stability points and ensures all word lines are completely filled with stable data. This preliminary stabilization prevents errors during subsequent erasure operations while preserving memory capacity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system changes the state of erase blocks from unstable (partially filled) to stable (completely filled) by adjusting write operations. The controller modifies the filling parameter of word lines to ensure complete data writing before erasure, transforming the block state to prevent errors.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If stability points are characterized and tracked to prevent errors, then data reliability is improved, but device complexity increases

Engineering Contradiction:
Improvedata reliabilityVSAvoidcharacterization system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The system implements self-service by having the NVMD controller automatically perform characterization and tracking of stability points without external intervention. The controller monitors its own operations, identifies stability points, and manages erase block states independently, improving reliability while minimizing added complexity.

Inventive Principle:
Principle #25Self-service

4Quantity of substance

If 20 nanometer flash memory devices are used to increase storage density, then memory capacity is improved, but susceptibility to errors in partially filled blocks increases

Engineering Contradiction:
Improvestorage densityVSAvoiderror susceptibility
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

Before using 20nm flash memory blocks, the system performs preliminary characterization to identify stability points and ensures complete word line filling. This preliminary action prevents errors in the high-density memory structure that is more susceptible to instability.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system changes operational parameters by ensuring word lines are completely filled before erasure in 20nm flash memory devices. The controller adjusts the filling completeness parameter to 100% for all word lines, preventing errors in the more error-prone high-density memory structure.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10475517B2Characterizing and operating a non-volatile memory device
Publication Date: 2019.11.12 WESTERN DIGITAL TECHNOLOGIES INC
  • US10475517B2 patent drawing
  • US10475517B2 patent drawing
  • US10475517B2 patent drawing

AI summary

A sequence of contiguous pages in an erase block in a non-volatile memory device is programmed and erased. Next, all of the pages in the erase block are programmed with data. Then, the data is read back and verified to determine whether there is an error in the data. When there is an error in the data, then the last page in the sequence is identified as being unstable. If there is no error in the data, then the last page in that sequence is identified as being stable. Thus, the recorded information identifies a point of instability in the erase block. Instabilities can be stabilized by performing additional writes to fill the partially filled word line.