Non-Volatile Memory Write-In Method Using Verification Current Feedback
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Solution Overview
Problem
Conventional data write-in methods in non-volatile memory fail to accurately determine the physical state of memory cells, leading to premature switching from normal to degraded write-in operations, which reduces the reliability and efficiency of data storage.
Innovation Solution
A data write-in method that determines the physical state of memory cells by adjusting reset and set voltages based on statistical verification currents, using flags to differentiate between safe, transition, and degraded states, thereby optimizing voltage settings for accurate data write-in operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a normal write-in operation set value is switched to a degraded write-in operation set value in advance during the transition period, then the reliability of data write-in is improved, but the memory utilization rate deteriorates due to premature switching
Solution Approach 1:
The patent dynamically adjusts write-in operation parameters (voltage levels, pulse widths) based on the detected physical state of memory cells. By changing parameters according to the actual degradation level rather than using fixed premature thresholds, the system maintains reliable write-in operations while extending the usable life of memory cells in the transition period.
Solution Approach 2:
The patent implements a feedback mechanism that monitors verification currents during read operations to detect the physical state of memory cells. This feedback information is used to dynamically determine whether to apply normal or degraded write-in operations, replacing the conventional open-loop approach that switches prematurely based on fixed cycle counts.
2Device complexity
If the physical state of memory is not accurately determined, then the complexity of the detection system is reduced, but the accuracy of degradation assessment deteriorates leading to premature operation switching
Solution Approach 1:
The patent replaces complex physical inspection methods with electrical measurement techniques. By measuring verification currents during normal read operations, the system can assess memory cell degradation without requiring additional physical sensors or complex detection hardware, achieving high measurement precision with minimal added complexity.
Solution Approach 2:
The patent uses the memory cells themselves to provide degradation information through their electrical characteristics. The verification currents generated during normal read operations contain information about the physical state of the cells, allowing the system to self-diagnose degradation without external testing equipment or complex detection systems.
Data Source
AI summary
A data write-in method and a non-volatile memory are provided. The data write-in method includes: providing a reset voltage to a plurality of selected memory cells according to a first flag, and recursively performing a reset process for the plurality of selected memory cells; setting a second flag according to a plurality of first verification currents of the plurality of selected memory cells; and under a condition that the second flag is set: providing a set voltage to the plurality of selected memory cells according to a resistance of the plurality of selected memory cells; and setting the first flag according to a plurality of second verification currents of the plurality of selected memory cells.