Ohmic Electrode Insulating Structure for Leakage Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Miniaturization of semiconductor devices leads to increased leakage current, which existing manufacturing methods struggle to effectively suppress.
Innovation Solution
A semiconductor device design that includes a first insulating film with a second insulating film covering the side surfaces of ohmic electrodes, where the second insulating film is continuous with the first, forming a barrier to reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor device is miniaturized, then the device size is reduced, but leakage current increases
Solution Approach 1:
The patent applies local quality by forming a second insulating film specifically on the side surface of the ohmic electrode, creating a localized insulating structure. This second insulating film has different properties than the first insulating film, providing enhanced leakage current suppression at the critical interface region between the ohmic electrode and gate electrode, while maintaining the overall miniaturized device structure.
Solution Approach 2:
The patent uses composite materials by combining two different insulating films (first insulating film and second insulating film) with distinct material properties. The first insulating film provides baseline insulation, while the second insulating film formed on the ohmic electrode side surface provides enhanced insulation specifically where leakage current occurs, creating a composite insulating structure that effectively suppresses leakage in miniaturized devices.
2Object-generated harmful factors
If a second insulating film is formed on the side surface of the ohmic electrode, then leakage current is suppressed, but device complexity increases
Solution Approach 1:
The patent merges the insulating functions by making the second insulating film continuous with the first insulating film. This continuity integrates the two insulating layers into a unified insulating structure that suppresses leakage current effectively while avoiding the need for separate, complex insulating components. The merged structure simplifies the overall device architecture compared to having discrete, separate insulating elements.
Solution Approach 2:
The second insulating film serves multiple functions: it provides electrical insulation on the side surface of the ohmic electrode, continues with the first insulating film to form a unified insulating barrier, and specifically targets the region where leakage current occurs between the ohmic electrode and gate electrode. This multi-functionality reduces the need for additional separate structures to address leakage.
Data Source
AI summary
With respect to a method of manufacturing a semiconductor device, the method includes forming a first insulating film on a semiconductor layer; forming a first opening in the first insulating film; forming an ohmic electrode that is in ohmic contact with the semiconductor layer through the first opening; and forming a second insulating film covering at least a portion of a side surface of the ohmic electrode. The second insulating film is located continuous with the first insulating film.