OLED Buffer Layer Titanium Ion Implantation for Laser Annealing
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Solution Overview
Problem
Conventional buffer layers in flexible OLED display panels are ineffective in protecting the polyimide (PI) layer from damage during excimer laser annealing, leading to manufacturing defects and quality issues.
Innovation Solution
A buffer layer comprising a silicon oxide layer with implanted titanium ions is formed on the polyimide layer, which increases absorption of UV excimer laser and reduces transmittance, mitigating damage to the PI layer and enhancing the manufacturing yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional buffer layer (SiNx/SiOx stack) is used in flexible OLED display panels, then the layer provides insulation and buffer functions, but the thermal insulation ability during excimer laser annealing is insufficient, causing damage to the PI layer
Solution Approach 1:
The patent applies composite materials by creating a multi-layer buffer structure comprising SiOx, SiNx, and Al2O3 layers. Each layer contributes different properties: SiOx provides thermal insulation, SiNx provides ion barrier and electrical insulation, and Al2O3 enhances thermal stability and laser resistance. This composite structure synergistically protects the PI layer from excimer laser damage while maintaining electrical insulation functions.
Solution Approach 2:
The patent changes the parameters of the buffer layer by introducing Al2O3 with specific physical and chemical properties that differ from conventional SiOx/SiNx stacks. The Al2O3 layer has higher melting point, better thermal stability, and superior resistance to excimer laser radiation, thereby changing the overall performance parameters of the buffer layer to better protect against laser-induced damage.
2Reliability
If SiNx layer is added to provide ion barrier and insulation, then current leakage is reduced, but the layer does not directly contact glass substrate and thus cannot provide adequate thermal insulation during excimer laser annealing
Solution Approach 1:
The patent segments the buffer layer into multiple functional layers: SiOx layer for thermal insulation, SiNx layer for ion barrier and electrical insulation, and Al2O3 layer for enhanced thermal stability. This segmentation allows each layer to specialize in its optimal function, with SiOx positioned to provide thermal protection during laser annealing while SiNx provides electrical insulation without needing to contact the glass substrate directly.
Solution Approach 2:
The patent introduces Al2O3 as an intermediary layer between SiOx and SiNx, and between the buffer layer and the PI layer. This intermediary layer provides enhanced thermal stability and laser resistance, mediating the thermal stress during excimer laser annealing and protecting the underlying PI layer while allowing the SiNx layer to focus on electrical insulation functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed buffer layer effectively absorbs UV excimer laser, reducing damage to the PI layer and improving the quality of OLED display panels by increasing the absorption and reducing the transmittance of the UV excimer laser during the annealing process.
Implementation Method 1
a buffer layer comprising a silicon oxide layer with implanted titanium ions is formed on the polyimide layer, which increases absorption of UV excimer laser and reduces transmittance
Implementation Method 2
a step S302 of using ion implantation to implant a plurality of titanium ions into the silicon oxide layer for forming a mixed layer of titanium dioxide and silicon oxide
Implementation Method 3
SiOx has superior thermal insulation, dissipation of heat during crystallization of a-Si decreases
Data Source
AI summary
The present disclosure provides a method for manufacturing a flexible base plate of an OLED display panel, comprising following steps: a step S10 of providing a glass substrate; a step S20 of forming a first polyimide layer on the surface of the glass substrate; and a step S30 of forming a buffer layer on a surface of the first polyimide layer; wherein the step S30 comprises: a step S301 of forming a silicon oxide layer on a surface of the first polyimide layer; and a step S302 of using ion implantation to implant a plurality of titanium ions into the silicon oxide layer for forming a mixed layer of titanium dioxide and silicon oxide.