OLED Gate Electrode High-k Insulation Structure
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Solution Overview
Problem
In organic light emitting display (OLED) devices, the use of high-k insulation layers for storage capacitors poses challenges due to low selectivity ratios with gate and active layers, leading to defects in contact holes during manufacturing, particularly as device sizes shrink and capacitance requirements become more stringent.
Innovation Solution
Incorporating a high-k insulation structure between gate electrodes and source/drain electrodes, spaced apart to prevent direct contact and minimize removal during etching processes, ensuring the insulation structure does not interfere with contact hole formation while maintaining high dielectric constant for capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high-k insulation layer is used as a dielectric layer of the storage capacitor, then the capacitance is ensured, but a defect of a contact hole may occur due to a low selectivity ratio
Solution Approach 1:
The gate electrode structure is divided into a first gate electrode and a second gate electrode separated by a high-k insulation structure. This segmentation allows the high-k insulation layer to be used in the storage capacitor while preventing contact hole defects by isolating it from the source/drain electrode formation process.
Solution Approach 2:
The high-k insulation structure acts as an intermediary element between the first gate electrode and the second gate electrode. It provides the necessary dielectric function for capacitance while serving as a protective barrier that prevents etching damage to the high-k insulation layer during contact hole formation.
2Area of moving object
If the device size becomes smaller, then the integration density is improved, but the area of the storage capacitor is reduced making it difficult to ensure capacitance
Solution Approach 1:
The invention changes the dielectric parameter by using a high-k insulation layer with higher dielectric constant than conventional insulation layers. This allows the storage capacitor to achieve the required capacitance value in a smaller area, enabling device miniaturization while maintaining electrical performance.
Solution Approach 2:
The gate electrode structure uses a composite configuration combining first gate electrode, high-k insulation structure, and second gate electrode. This composite structure provides both the capacitive function and the protective function needed for small-size device manufacturing.
3Reliability
If the high-k insulation structure is disposed close to the source/drain electrodes, then the capacitance is maximized, but the selectivity ratio decreases leading to contact hole defects
Solution Approach 1:
By segmenting the gate electrode into two separate electrodes with the high-k insulation structure in between, the invention achieves optimal spacing that balances capacitance maximization with manufacturing feasibility. The segmentation creates distinct functional zones that resolve the selectivity issue.
Solution Approach 2:
The high-k insulation structure is positioned in the vertical dimension between the first and second gate electrodes, rather than horizontally adjacent to source/drain electrodes. This dimensional arrangement maintains capacitance while improving etch selectivity during contact hole formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of contact holes without defects and enhances capacitance by using a high-k insulation structure that covers and protects gate electrodes, ensuring reliable OLED device manufacturing and performance.
Implementation Method 1
a first high dielectric constant (high-k) insulation structure disposed between the first gate electrode and the second gate electrode
Data Source
AI summary
An OLED device includes a substrate, a first active layer, a first gate electrode, a second gate electrode, first source and first drain electrodes, a first high dielectric constant (high-k) insulation structure, and a light emitting structure. The substrate has a first region and a second region. The first active layer is disposed in the first region on the substrate. The first gate electrode is disposed on the first active layer, and has a first thickness. The second gate electrode is disposed on the first gate electrode. The first source electrode and first drain electrode are disposed on the second gate electrode, and constitutes a first semiconductor element together with the first active layer and the first gate electrode. The first high-k insulation structure is disposed between the first gate electrode and the second gate electrode, and is spaced apart from the first source electrode and first drain electrode.