Light Blocking Layer for OLED Transistor Stability
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Solution Overview
Problem
The stability of thin film transistors in OLED display panels is degraded due to leakage current generated by optical excitation from ambient direct light and reflected light that irradiates on the transistors after passing through the pixel define layer.
Innovation Solution
A light blocking layer is introduced between the array substrate and the pixel define layer to prevent light from reaching the thin film transistors, reducing leakage current and improving transistor stability by blocking ambient and reflected light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a light blocking layer is added to prevent light from reaching thin film transistors, then transistor stability is improved, but device structure becomes more complex
Solution Approach 1:
A light blocking layer is introduced as an intermediary component between the pixel define layer and the array substrate. This layer specifically blocks light from reaching the thin film transistor while allowing the organic light-emitting structure to function normally. The light blocking layer acts as a mediator that prevents harmful optical excitation of the transistor without interfering with the display function.
Solution Approach 2:
The display panel structure is segmented into distinct functional layers, with the light blocking layer being a separate, independent layer positioned between the pixel define layer and the array substrate. This segmentation allows the light blocking function to be independently optimized without affecting other components, and enables targeted placement of the blocking function only where needed (at the transistor location).
2Object-affected harmful factors
If the light blocking layer is positioned close to the array substrate to protect transistors, then light blocking effectiveness is improved, but manufacturing precision requirements increase
Solution Approach 1:
The light blocking layer is formed during the manufacturing process at a predetermined position between the pixel define layer and the array substrate. The patterned structure of the light blocking layer is designed in advance to align with the thin film transistor locations. By establishing the blocking function during the manufacturing sequence rather than requiring post-assembly adjustment, the precision requirements are managed through controlled fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The light blocking layer effectively reduces leakage current in thin film transistors, enhancing their stability and increasing light extraction efficiency by preventing optical excitation, while also simplifying manufacturing processes and reducing production costs.
Implementation Method 1
a light blocking layer disposed between the array substrate and the pixel define layer and configured to prevent light passing through the pixel define layer from irradiating on the thin film transistor
Data Source
AI summary
A display device, display panel and manufacturing method thereof, where the display panel includes an array substrate including a plurality of thin film transistors, a pixel define layer disposed on the array substrate, and an organic light-emitting structure which is surrounded by the pixel define layer and of a top emission structure. The display panel further includes: a light blocking layer disposed between the array substrate and the pixel define layer and configured to prevent light passing through the pixel define layer from irradiating on the thin film transistor. By disposing the light blocking layer between the array substrate and the pixel define layer, light passing through the pixel define layer may be prevented from irradiating on the thin film transistor in the array substrate. Therefore, leakage current generated by the thin film transistor due to optical excitation may be reduced, thereby improving stability of the thin film transistor.