OLED Semiconductor Crystallization Using Selective Masking
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Solution Overview
Problem
Conventional OLED display devices face issues with charge mobility due to uncrystallized metal-induced lateral crystallization (MILC) fronts in the channel region, leading to deteriorated electrical characteristics.
Innovation Solution
The implementation of a manufacturing method that uses metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) processes to crystallize semiconductor layers, ensuring no MILC front is formed in the channel region, thereby enhancing charge mobility and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If both MIC and MILC processes are used to crystallize the semiconductor layer, then crystallization coverage is improved, but MILC fronts collide in the channel region causing uncrystallized regions that reduce charge mobility
Solution Approach 1:
The patent extracts the harmful MILC crystallization process from the channel region by using selective masking. The masking layer prevents MILC fronts from forming in the channel area while allowing them to proceed in other regions, thereby eliminating the collision of MILC fronts that causes uncrystallized regions and charge mobility degradation.
Solution Approach 2:
The patent applies different crystallization methods to different regions of the semiconductor layer. The channel region receives only MIC crystallization through selective masking, while other regions can undergo both MIC and MILC processes. This local differentiation ensures uniform crystallization quality in the channel region without sacrificing overall crystallization coverage.
2Speed
If MILC process is applied to the semiconductor layer, then crystallization speed is improved, but uniformity of electrical characteristics deteriorates due to MILC front collision
Solution Approach 1:
The patent removes the MILC process from the channel region using selective masking, preventing the formation of uncrystallized MILC fronts that cause non-uniform electrical characteristics. This extraction maintains crystallization speed in non-channel regions while ensuring uniformity in the channel region.
Solution Approach 2:
The patent implements region-specific crystallization control where the channel region undergoes only MIC for uniform electrical characteristics, while other regions benefit from both MIC and MILC for faster overall crystallization. This local quality approach resolves the contradiction between speed and uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the electrical characteristics of OLED display devices by increasing charge mobility and achieving uniform crystallization across the semiconductor layers, resulting in better device performance.
Implementation Method 1
a first capacitor electrode disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC)
Implementation Method 2
a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region that are formed using metal induced lateral crystallization (MILC)
Data Source
AI summary
An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.