OLED Display Substrate Shielding Layout for Leakage Control
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Solution Overview
Problem
Existing OLED display devices face challenges in maintaining stable voltage levels and reducing leakage currents in transistors, which affect the driving performance of the display circuits.
Innovation Solution
The display substrate incorporates a shielding portion located above the channel connection portion of a dual-gate dual-channel transistor, which receives various signals and forms integral structures with conductive layers to stabilize voltage and reduce leakage currents, enhancing the driving circuit's efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional transistor structure is used in OLED display devices, then the device complexity is reduced, but the voltage stability and leakage current control deteriorate
Solution Approach 1:
The transistor channel is divided into two separate sub-channels (first sub-channel portion and second sub-channel portion) connected by a channel connection portion. This segmentation allows independent control and optimization of different current paths, improving voltage stability and leakage current control while maintaining manageable structural complexity through systematic design.
Solution Approach 2:
The channel connection portion is positioned within the overlapping region of the first and second gate electrodes, creating a nested structure where the connection portion is embedded in the gate overlap area. This nested arrangement utilizes the gate overlap region to house the channel connection, reducing overall device footprint while enhancing electrical control without significantly increasing structural complexity.
2Reliability
If the channel connection portion is positioned under the gate overlap region, then the voltage control is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The channel connection portion is positioned in the region where the first and second gate electrodes overlap, creating an equipotential zone that provides stable voltage control for the channel connection. This positioning ensures that the channel connection portion experiences a consistent electrical environment, improving voltage control while the overlap region's inherent geometry provides natural alignment references that reduce manufacturing precision requirements.
3Productivity
If the transistor uses a dual-gate dual-channel structure, then the driving performance is improved, but the ease of manufacture deteriorates
Solution Approach 1:
The first and second gate electrodes serve multiple functions: they individually control their respective sub-channels, their overlap region provides the channel connection portion, and together they create the dual-gate dual-channel transistor functionality. This multi-functionality reduces the need for separate dedicated structures, simplifying the overall fabrication process while maintaining high driving performance.
Data Source
AI summary
A display substrate includes a base substrate and sub-pixels. The sub-pixel includes a light-emitting element and a driving circuit. The driving circuit includes first to third transistors and a first storage capacitor. The second transistor includes an active portion including a channel portion and first and second electrodes respectively connected to the channel portion on opposite sides of the channel portion. The channel portion includes first and second sub-channel portions and a channel connection portion connected between the first and second sub-channel portions. The display substrate further includes a shielding portion, a layer where the shielding portion is located is on a side of a layer where the active portion of the second transistor is located away from the base substrate. An orthographic projection of the shielding portion on the base substrate at least partially overlaps with an orthographic projection of the channel connection portion on the base substrate.