OLED Storage Capacitor Design Using Source and Cathode Electrodes
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Solution Overview
Problem
Conventional OLED display devices have limited maximum resolution and reduced aperture due to the extensive area occupied by the array structure of storage capacitors, which is caused by the numerous gate electrodes and gate lines on the thin film transistor layer.
Innovation Solution
The solution involves a storage capacitor design where a source and drain metal layer of a thin film transistor serves as one electrode, and a cathode layer of an OLED layer serves as the other electrode, with an inorganic film layer or electron transporting layer acting as a dielectric material between them, allowing the storage capacitor to be aligned with the array lines of the thin film transistor, thereby optimizing the arrangement of lines and increasing the aperture.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional storage capacitor structure with separate gate electrodes and gate lines is used, then storage capacitor function is achieved, but area occupied is too large
Solution Approach 1:
The patent merges the storage capacitor structure with the thin film transistor structure by using the source electrode of the driving transistor as one electrode of the storage capacitor and adding a node electrode connected to the drain electrode. This integration eliminates separate gate electrodes and gate lines for the storage capacitor, significantly reducing the area occupied while maintaining the storage function.
Solution Approach 2:
The source electrode of the driving transistor serves dual purposes: it acts as both the source electrode for the transistor and one electrode of the storage capacitor. This multi-functionality reduces the number of separate components needed and minimizes the overall area required for both the transistor and storage capacitor operations.
2Reliability
If more gate electrodes and gate lines are formed to improve storage capacitor performance, then storage function is enhanced, but resolution is limited
Solution Approach 1:
By merging the storage capacitor structure with the thin film transistor structure, the patent reduces the number of separate gate electrodes and gate lines needed. This integration maintains storage function while reducing the complexity of the array structure, thereby improving resolution capability.
3Reliability
If conventional storage capacitor structure is used, then storage capacity is sufficient, but aperture is reduced
Solution Approach 1:
The patent merges the storage capacitor structure with the thin film transistor structure, allowing the storage function to be achieved within the existing transistor area. This integration maintains sufficient storage capacity while increasing the aperture by eliminating the need for separate storage capacitor structures that would otherwise occupy additional area.
Data Source
AI summary
This application provides a display device and an OLED display panel. The display device comprises a storage capacitor. A part of a source and drain metal layer is a first electrode of a storage capacitor. A cathode layer is a second electrode of the storage capacitor. An electron transmitting functional layer, a passivation layer, and an inorganic pixel defining layer arranged between the first electrode and the second electrode are the dielectric materials of the storage capacitor.