Solid-State Devices TRIZ Cases

Shared contact and gate electrode layers reduce masking steps in amorphous silicon photoelectric device fabrication.

Multi-plane electrode structure increases capacitance density, resolving die area constraints in memory integrated circuits.

A semi-transparent OLED anode creates a microcavity to boost luminance and color purity.

Infiltrating liquid resin into a porous ceramic sintered body creates a composite with controlled void spaces.

A tilted contact surface redirects reflected light to suppress optical feedback while maintaining precise attachment accuracy.

A display panel routes first and second reference voltage lines along perpendicular directions to connect directly with a driving chip.

Trench isolation structures relax a lattice-matched semiconductor layer to impart directional stress on the active device channel.

A trapezoidal n-type semiconductor layer with inclined side surfaces directs internal photons laterally to escape the chip structure.

A field programmable transistor array integrates reconfigurable logic with fixed ASIC circuits to enhance chip density.

Selective wet etching of silicon dioxide films forms control gate recesses to achieve uniform floating gate thickness and improve data retention.

A GeBiTe phase change material layer with specific atomic ratios enables faster programming and lower power consumption in memory devices.

Vertical bonding of memory and CMOS chips overlaps the sense amplifier region with the memory array, reducing the RC time constant to lower power consumption.

Inorganic particle coatings resolve heat transfer and light absorption trade-offs by reflecting canyon wall losses.

Segmented adhesive layers with distinct elastic moduli resolve the trade-off between bending durability and sensor thickness.

Merging the mechanical support and gate electrode into one doped polysilicon structure reduces erase voltage without increasing vertical device height.

A light blocking layer on the active layer absorbs specific wavelengths to protect the oxide semiconductor from degradation.

Tension-controlled support tape bends epitaxial films away from substrates to accelerate sacrificial layer removal while maintaining structural integrity.

Organic vapor jet printing patterns emissive layers and upper electrodes on OLED substrates without photolithography.

Optimizing insulating layer width ratios between adjacent trenches resolves slot dependency issues, achieving consistent SRAM yield rates across the wafer.

Lining openings with ferroelectric material and inner spacers in 3D memory stacks lowers parasitic capacitance for higher density.

Rapid thermal processing and wet etching clean electrodeposited flip-chip bases for reliable surface mounting.

Aluminum silicon oxide liner deposited at low temperatures prevents thermal diffusion and improves adhesion between phase change memory elements.

Nano-imprinted micro-lenses on a plasma-polymerized light extraction film resolve limited luminous flux and poor optical coupling in conventional OLED devices.

Specific retardation values in twisted liquid crystal layers suppress black color mixing in front-view organic EL displays.

Regioregular polythiophene thin films with heteroatom substitutions enable high conductivity in non-light emitting diodes.

Replacing photolithography color filters with micromachined island semiconductors increases pixel density and light transmittance.

A multi-layer gate insulation film structure with segmented crystal grains to minimize leakage current in semiconductor memory devices.

Integrating an inductor as a heat sink reduces the footprint of power modules while improving thermal dissipation from the semiconductor die.

Merging sub-light emitting units sharing semiconductor layers reduces pixel area, resolving the trade-off between high resolution and production cost.

A display substrate uses insulated protrusions to stabilize the second surface during component assembly.

End surface conductive layers guide plating growth to prevent short circuits, enabling high-density wiring in droplet ejecting heads.

A vertical LED structure laminates multiple chip layers with reflective interfaces to boost light extraction efficiency.

A solution-based organic light emitting display device uses a hydrophobic interlayer to enable precise layer deposition without mechanical masks.

Chiral perovskite quantum dots eliminate external polarizers by emitting circularly polarized light directly, improving transmission efficiency.

Insulating material breakdown forms a compact contact structure in phase change memory, eliminating steering elements and reducing manufacturing complexity.

Vertical bit-line pillars in 3D NOR-P memory devices reduce wire lengths, improving retention time and power efficiency.

A semi-transmissive layer with multiple refractive sub-layers refracts light to enhance luminous efficiency in organic light emitting diode displays.

An organic photoelectric conversion layer with narrow absorption bandwidth eliminates spectral prisms, enabling thin imaging devices.

Individual fuses on a Geiger-mode APD array break conduction during shorts, preventing catastrophic failure and preserving fabrication throughput.

A photodetector uses a light-trapping layer with recessed portions to lengthen the optical path and increase light absorption.

Parallel auxiliary electrode reduces cathode resistance to prevent IR drops and improve image quality in large OLED displays.

A manufacturing method for electronic devices on glass substrates using segmented mother glass and selective tempering.

Peripheral organic banks isolate the display area from impurities, preventing image quality deterioration during manufacturing and usage.

Separating transmitting and pixel regions reduces light scattering from conductive lines, improving transparency and color stability.

A low-refractive index pattern on a light-blocking layer redirects incident light toward photoelectric conversion portions.

A magnetic tunnel junction stack uses vertically stacked bits with distinct critical currents for single-path read and write operations.

Asymmetric color filter widths and recessed structures correct lateral color twist defects, ensuring consistent front and side luminance distribution.

Reducing connection line resistivity below gate line levels minimizes Joule heating and prevents burnout under high current loads.

Strip-shaped polarizing portions transmit UV curing light to eliminate adhesive curing non-uniformity and boost manufacturing yield.

A semiconductor memory device positions a charge accumulation layer between control gate electrodes and a vertical semiconductor channel.

A monolithic 3D multispectral imaging sensor stacks distinct light detecting layers for simultaneous spectral capture.

A covalently bonded organic inorganic composite layer enhances electron affinity and conductivity within an organic light emitting device.

An inorganic first passivation layer defines contact hole patterns before organic insulator deposition, preventing reflow and maintaining consistent width.

A display substrate divides pixels into multiple light emitting units with integrated layers formed from the same material in a single film forming process.

Segmented island substrates linked by density-gradient conductive particles maintain electrical signals during mechanical stretching.

A transistor structure with self-aligned source and drain contacts using vertical dielectric spacers.

Segmented p-doped and n-doped sublayers with phosphine oxide matrices reduce operating voltage while improving efficiency and voltage stability.

A planarization layer creates a flat deposition surface on a curved substrate to ensure uniform thickness and prevent short circuits during vacuum evaporation.

A memory device structure incorporating a transition metal oxide layer that undergoes a metal-insulator transition to enable reversible conductivity changes.

A photo-detection apparatus uses optimized semiconductor region potentials to direct signal charges efficiently.

Segmented isolation barriers prevent program disturbance and second bit effect in miniaturized non-volatile memory devices.

Replacing complex vias with a conductive sealing bead simplifies manufacturing hermeticity for implantable medical devices.

Segmented sealing members use substrate grooves to accommodate non-cured portions, reducing dead area size while maintaining sealing reliability.

Segmented resin layer and window protrusions refract and scatter light, reducing moiré and sparkling at curved viewing angles.

A magnetic memory device uses a heavy metal nonmagnet layer to inject spin orbit torque for efficient data writing.

Segmented inorganic layers with openings relieve stress on thin film transistors during bending, preventing defects and maintaining normal operation.

An integrated circuit stores configuration data in internal nonvolatile memory, eliminating external components and reducing CPU load during startup.

Coating frame adhesive across adjacent OLED panels enables simultaneous laser curing, reducing edge frame size and improving substrate utilization.

Partition wall covers underlayer protrusions to prevent film thickness non-uniformity and leakage paths.

A 3D NAND memory structure uses a top poly cut to bypass deep etching limits and enable higher layer stacking.

Protective sleeves shield dielectric layers during isotropic etching, preventing damage while forming continuous air gaps for reliable NAND string isolation.

Silicon nitride etch-stops and silicon-rich oxide buffers prevent unintended damage to phase-change members during dielectric etching.

A hafnium zirconium oxide gate insulating film undergoes crystallization heat treatment to achieve high relative permittivity.

A self-aligned bulk-exposed layer edge defines the active area boundary in FDSOI devices.

Merging pixel-defining and wire-protection layers into one insulating structure reduces mask count, lowering costs while maintaining precision.

Optimized electrode spacing ensures uniform horizontal fields across pixel areas, resolving vertical field losses to boost light transmittance.

A method for forming 3D memory channel holes using epitaxial layers and hybrid bonding to create joint structures.

Selective wet etching removes overhangs in deep holes, preventing gap formation and ensuring complete dielectric coverage for reliable capacitors.

A Serial Configuration Interface uses serial signaling to configure device options with minimal logic overhead.

Segmented insulating layers with integrated openings in a display device suppress color mixture between adjacent pixels while maintaining manufacturing yield.

A storage capacitor design uses a source metal layer and cathode as electrodes to optimize line arrangement.

Selective metal deposition and phosphorus doping in polysilicon thin film transistors minimize channel impurities, reducing leakage current.

Self-aligned double-patterning forms recessed word-line contacts, eliminating complex mask operations to improve manufacturing yield and memory density.

Nitride protective layers isolate memory cell fabrication from FinFET logic processing steps, preventing mutual interference and maintaining device performance.

A macromolecular compound with a light absorbing terminal wavelength of 700 nm or more enhances short-circuit current density in organic photovoltaic devices.

A light transmissive substrate allows optical detection of electrode positions, reducing manufacturing costs and eliminating complex identification instruments.

A semiconductor memory device uses a quantum well to restrict electron tunneling current flow.

Dual-solvent ink mixing suppresses droplet convection to resolve thickness non-uniformity in printed organic semiconductor layers.

A detecting unit overlaps the circuit pattern to verify sealant adhesion integrity on organic light-emitting display substrates.

Ghost patterns in isolation regions guide vertical alignment during high aspect ratio etching, reducing bending defects and improving integration density.

Metal rings encircle clear color filters on the backside of BSI image sensors to block stray light paths between adjacent pixels.

Optical devices on a flat display substrate form a curved image, avoiding light leakage and high costs from flexible designs.

Thermoset carrier structures reduce thermal resistance while maintaining consistent light color temperature across emission directions.

An annular groove contains laser ablation debris during rear-surface via hole formation, preventing particle accumulation that interferes with chip stacking.

A transistor with asymmetrical source and drain regions increases source resistance to improve write margin in memory circuits.

A coated organic electroluminescence device positions the light emission region on the electron transport layer side to optimize charge mobility.

Double-layered gate insulator prevents threshold voltage shifts caused by low-temperature fabrication defects.

A solid-state imaging device uses partial rear-surface adhesive bonding to maintain mechanical fixation while creating air flow paths for heat removal.

A multiplexer-based routing network reduces switch components by leveraging equivalent pin properties to optimize signal paths.

Binary quantum sensor elements convert single photons into digital signals, replacing bulky analog photomultiplier tubes with compact semiconductor arrays.