OLED Transistor Overlap Structure for Wider Gray-Scale Range
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Solution Overview
Problem
Current organic light emitting diode (OLED) displays face limitations in achieving high data range and current flow in transistors, which affect display quality and the ability to display various gray images efficiently.
Innovation Solution
The design includes a transistor structure with specific overlapping layers and contact configurations on a substrate, featuring a semiconductor layer, gate electrode, and contact overlapping layers separated by gaps within the channel region, enhancing the data range and current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional transistor structure is used, then device complexity is low, but data range and current flow are insufficient
Solution Approach 1:
The transistor structure is divided into multiple overlapping layers (first gate contact overlapping layer, semiconductor contact overlapping layer, second gate contact overlapping layer) with gaps between them. This segmentation allows each layer to perform specific functions while collectively achieving enhanced current flow and data range without excessive complexity.
Solution Approach 2:
The patent introduces overlapping layers that extend in the vertical dimension above the channel region, rather than only horizontal expansion. This dimensional change enables increased current flow and data range while maintaining a compact planar footprint and controlled structural complexity.
2Reliability
If transistor current flow is increased, then display quality improves, but device structure becomes more complex
Solution Approach 1:
The overlapping layers are positioned locally above the channel region with specific gap configurations, concentrating the current enhancement effect where it is most needed for display quality while avoiding unnecessary structural complexity in other areas of the transistor.
3Adaptability or versatility
If overlapping layers are added to increase data range, then transistor performance improves, but manufacturing precision requirements increase
Solution Approach 1:
Multiple overlapping layers are combined in a stacked configuration above the channel region, creating a unified structure that achieves extended data range while using shared support elements and alignment references to manage manufacturing precision requirements.
Data Source
AI summary
A display device includes: a substrate; and a transistor on the substrate. The transistor includes: a semiconductor layer; a gate electrode overlapping with the semiconductor layer; a first gate contact overlapping layer overlapping with a channel region, and in contact with the gate electrode, the channel region being a region where the gate electrode and the semiconductor layer are overlapped with each other; and a semiconductor contact overlapping layer overlapping with the channel region, and in contact with the semiconductor layer. The first gate contact overlapping layer and the semiconductor contact overlapping layer are spaced apart from each other by a gap within the channel region.