OLED Pixel Transistor Shielding for Stable Gate Voltage

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Solution Overview

Problem

Current OLED display devices face challenges in efficiently initializing and maintaining the voltage of transistors, leading to potential display failures such as luminance changes and color coordinate shifts due to external light interference and leakage currents.

Innovation Solution

The implementation of a shielding part that overlaps specific boundaries between source and channel regions of transistors, along with a capacitor structure that includes a driving gate electrode and an initialization voltage line, helps to block external light and prevent voltage changes, ensuring stable transistor operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a shielding part is added to block external light and prevent leakage currents, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvetransistor voltage stabilityVSAvoidtransistor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The transistor is divided into distinct regions (source region, channel region, drain region) with clearly defined boundaries. The shielding part is selectively positioned at specific boundaries (between source and channel, or between drain and channel) rather than covering the entire transistor, achieving protection while minimizing added complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The shielding part acts as an intermediary element introduced between the transistor components and external environmental factors (light and leakage currents). This intermediary structure blocks harmful external influences without requiring fundamental changes to the transistor's core operational structure

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-generated harmful factors

If the shielding part overlaps the boundary between source and channel region, then leakage current suppression is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveleakage currentVSAvoidshielding part positioning accuracy
Core Design Contradiction:
Object-generated harmful factorsVSManufacturing precision

Solution Approach 1:

The shielding part is applied locally at specific critical boundaries (source-channel or drain-channel interfaces) rather than uniformly across the entire transistor. This localized approach targets the specific regions where leakage currents originate, improving suppression effectiveness while reducing the overall area requiring high-precision manufacturing

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses leakage currents and maintains stable voltage, preventing display failures like luminance changes and color shifts, thereby enhancing the reliability of OLED displays.

Implementation Method 1

a shielding part at least partially overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region in the plan view

Methodology Applied
Scientific EffectLight blocking: Absorption (EM radiation)

Data Source

PatentUS12016212B2Display device having an emission layer
Publication Date: 2024.06.18 SAMSUNG DISPLAY CO LTD
  • US12016212B2 patent drawing
  • US12016212B2 patent drawing
  • US12016212B2 patent drawing

AI summary

A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.