Organic Light Emitting Transistor Temperature Sensing via Electrode Resistance
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Solution Overview
Problem
Existing organic light emitting transistors (OLETs) are limited in their ability to integrate temperature sensing functionality, as they primarily control luminescence behavior without effective temperature detection capabilities.
Innovation Solution
An organic light emitting transistor is designed with a thermosensitive and non-thermosensitive material combination in the gate and external electrodes, where the resistance ratio changes with temperature, allowing for temperature-dependent voltage variations and color changes in the light output, enabling both qualitative and quantitative temperature measurement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional OLET structure is used, then the device can control luminescence behavior, but it lacks temperature detection capability
Solution Approach 1:
The patent combines temperature sensing functionality with the OLET structure by integrating a thermosensitive material into the gate electrode, creating a multi-functional device that simultaneously controls luminescence and detects temperature without requiring separate sensing components
Solution Approach 2:
The gate electrode is designed to serve dual purposes: controlling the luminescence behavior of the light emitting functional layer and sensing temperature through its thermosensitive material component, thereby making the OLET a universal device for both light control and temperature detection
2Adaptability or versatility
If thermosensitive material is added to gate electrode, then temperature sensing is enabled, but manufacturing complexity increases
Solution Approach 1:
The gate electrode is constructed as a composite structure incorporating thermosensitive material (such as PEDOT:PSS with carbon nanotubes) combined with conventional conductive materials, enabling temperature sensing functionality while maintaining compatibility with existing manufacturing processes for organic electronic devices
3Measurement precision
If resistance ratio changes with temperature, then temperature measurement precision improves, but device stability may be affected
Solution Approach 1:
The thermosensitive material is selectively placed in specific regions of the gate electrode structure where temperature-induced resistance changes can be measured without compromising the overall electrical stability and functionality of the transistor, allowing precise local temperature sensing while maintaining global device stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration of temperature sensing functionality enhances the versatility of OLETs by allowing for precise temperature detection, improving the device's ability to indicate temperature through resistance and color changes, thus overcoming the limitations of traditional OLETs.
Implementation Method 1
a temperature-dependent resistance change rate of the gate electrode is different from a temperature-dependent resistance change rate of the external electrode
Implementation Method 2
a light output by the light emitting functional layer has a color which changes with a resistance of the gate electrode
Data Source
AI summary
Embodiments of the present disclosure provide an organic light emitting transistor comprising: a substrate, and a gate electrode, a gate insulating layer, source/drain electrodes and a light emitting functional layer disposed on the substrate, wherein the organic light emitting transistor further comprises an external electrode coupled to the gate electrode in series, wherein a temperature-dependent resistance change rate of the gate electrode is different from a temperature-dependent resistance change rate of the external electrode.