Optical Semiconductor Resin Structure for Higher Dielectric Strength
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Solution Overview
Problem
Conventional optical semiconductor modules have low dielectric strength due to a linear interface between resins with significant potential differences, which decreases their dielectric strength.
Innovation Solution
The semiconductor device incorporates a transparent resin with irregularities on its reverse surface and an elliptical shape, along with white and sealing resins, to increase the interface distances and improve dielectric strength, and the manufacturing method involves specific steps for forming these resins to cover the light-emitting and light-receiving elements effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the interface between resins is arranged linearly between leads with significant potential differences, then the manufacturing process is simplified, but the dielectric strength decreases
Solution Approach 1:
The patent applies curvature by forming the transparent resin into a dome shape with a curved interface surface instead of a linear interface. This curved configuration increases the interface distance between resins with significant potential differences, thereby improving dielectric strength while maintaining manufacturing feasibility through molding processes
Solution Approach 2:
The patent transitions from a two-dimensional linear interface to a three-dimensional curved interface by forming the transparent resin as a dome. This dimensional change increases the path length and distance between resin interfaces with potential differences, enhancing dielectric strength without complicating the manufacturing process
2Reliability
If the interface distance between resins is increased to improve dielectric strength, then reliability improves, but the device complexity increases
Solution Approach 1:
The patent merges the transparent resin into a single integrated dome structure that simultaneously provides optical functionality and electrical insulation. This unified structure increases interface distances for improved dielectric strength while avoiding the need for separate insulating components, thus not increasing overall device complexity
Data Source
AI summary
Semiconductor device includes first lead, second lead, light-emitting element, light-receiving element, transparent resin and first resin. First lead includes first die pad having first obverse surface and first reverse surface mutually opposite in thickness direction. Second lead includes second die pad having second obverse surface facing same side as first obverse surface in thickness direction and second reverse surface facing same side as first reverse surface in thickness direction. Light-emitting element is mounted on first obverse surface. Light-receiving element is mounted on second obverse surface. Transparent resin covers portions of light-emitting element and light-receiving element. First resin covers transparent resin. Transparent resin includes transparent-resin obverse surface facing same side as first obverse surface in thickness direction, and transparent-resin reverse surface facing same side as first reverse surface in thickness direction. Transparent-resin reverse surface has surface roughness larger than that of transparent-resin obverse surface.