Optoelectronic Semiconductor Chip Pixelated Partition Walls

The emission side is divided into multiple emission fields (pixels) separated by partition walls. Each partition wall independently separates adjacent emission fields, preventing optical crosstalk. This segmentation approach achieves high optical separation precision while maintaining a relatively simple overall structure that can be manufactured using standard semiconductor fabrication processes.

Partition walls act as intermediary elements positioned between adjacent emission fields. These partition walls serve as optical barriers that prevent light from one pixel from interfering with adjacent pixels. The partition walls are integrated into the semiconductor layer sequence, allowing them to function as mediators that resolve the conflict between achieving optical separation and maintaining structural simplicity.

The patent utilizes sedimentation parameters (gravity, time, particle density) to achieve homogeneous distribution of phosphor particles within the conversion material. By controlling the sedimentation process parameters, the phosphor particles settle into a uniform distribution pattern, creating consistent color output across each emission field. This parameter-based approach achieves high color homogeneity through a relatively simple process that leverages natural physical phenomena.

The conversion material undergoes a phase transition from liquid to solid during the sedimentation and curing process. In the liquid state, phosphor particles can settle and distribute uniformly under gravity. Upon curing, the material transitions to a solid state, locking the homogeneous particle distribution in place. This phase transition enables achievement of color homogeneity without requiring complex manufacturing equipment or processes.