Optoelectronic Semiconductor Device Current Distribution

A transparent conductive oxide layer (such as ITO, IZO, or ZnO) is introduced as an intermediary between the semiconductor layer and the current distribution structure. This intermediate layer allows electrical current to be distributed laterally while remaining transparent to the generated radiation, thus preventing the shading effect that would occur with a direct metallic current distribution structure on the top surface.

The current distribution structure is formed as a composite material system combining a metallic layer (such as aluminum, silver, or copper) with a transparent conductive oxide layer. The metallic layer provides excellent electrical conductivity for efficient current distribution, while the transparent conductive oxide layer allows radiation to pass through without significant absorption, thus creating a composite structure that achieves both electrical and optical performance requirements.

Instead of using a complex mirror structure with specific geometric configurations, the first electrode is designed with optimized optical parameters including reflectivity coefficient, layer thickness, and material composition. By changing these parameters, the electrode achieves effective radiation reflection and directionality toward the top emission side while maintaining a simpler planar structure that is easier to manufacture using standard semiconductor fabrication processes.