Optoelectronic Component Edge Modification for Reflective Particle Separation
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Solution Overview
Problem
Existing methods for producing optoelectronic components with dispersed materials limit reflectivity and coupling-out efficiency due to limited volume of dispersed material, and require high process control to prevent reflective particles from depositing on chip surfaces, leading to low reliability and increased lateral radiation emission.
Innovation Solution
Modifying the chip edge of a semiconductor chip to cause the dispersed material to separate into its constituents, allowing for targeted application of reflective particles only at the chip edge, thereby increasing coupling-out efficiency and suppressing lateral radiation emission by forming a separating edge between the dispersed material and matrix material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the volume of dispersed material is increased to improve reflectivity, then reflectivity at reflective particles is improved, but the risk of particle deposition on chip surface increases and process reliability deteriorates
Solution Approach 1:
The chip surface is divided into two regions with different properties: a modified separation edge region that promotes particle deposition and a non-modified active region that prevents particle deposition. This segmentation allows the dispersed material to be applied in larger volumes without compromising reliability, as particles are guided to deposit only in the designated separation edge region.
Solution Approach 2:
The separation edge of the chip is selectively modified to create local differences in surface properties. This local modification causes the dispersed material to separate into matrix material and particles at the edge, with particles depositing there while the matrix material can still cover the active region. This enables increased dispersed material volume while maintaining process reliability through controlled local deposition.
2Manufacturing precision
If spatially targeted application is used to prevent particle deposition on chip surface, then coupling-out efficiency is maintained, but the volume of dispersed material is limited and reflectivity is reduced
Solution Approach 1:
The chip separation edge is pre-modified before applying the dispersed material. This preliminary action creates a surface that actively promotes particle separation and deposition at the edge. As a result, when the dispersed material is applied, particles automatically concentrate at the modified edge without requiring complex spatially targeted application processes, enabling both precision and increased material volume.
3Quantity of substance
If dispersed material is applied to increase reflectivity, then reflectivity at particles is improved, but lateral radiation emission increases
Solution Approach 1:
By segmenting the chip surface into a modified separation edge region and a non-modified active region, particles are confined to the edge region while the active region remains clear. This spatial segregation ensures that reflective particles do not interfere with light coupling from the active region, thereby increasing reflectivity without generating harmful lateral radiation emission.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances coupling-out efficiency and suppresses lateral radiation emission by ensuring reflective particles are concentrated at the chip edge, preventing deposition on the chip surface and improving the emission characteristic of the optoelectronic component.
Implementation Method 1
at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge
Implementation Method 2
the protective layer changes the surface energy of the semiconductor chips such that the dispersed material does not adhere to a chip surface facing away from the carrier
Data Source
AI summary
An optoelectronic component includes a carrier; a semiconductor chip having an active layer that generates radiation and is arranged on a carrier; a dispersed material including a matrix material and particles embedded therein arranged on the semiconductor chip and/or the carrier at least in regions, and is integral therewith; and a separating edge between the dispersed material and matrix material formed at a chip edge of the semiconductor chip.