Semiconductor Devices TRIZ Cases

A bowl-shaped gate extending into STI increases carrier accumulation below the trench, cutting LDMOS RDS(on) without enlarging device area.

A composition-graded spacer and thinner barrier improve Far-UVC LED electron injection, suppress overflow, and raise light output.

A dual silicon oxide stack adds deposited oxide over wet-grown tunnel oxide to improve thermal stability, passivation, and dopant control.

Different dielectric thicknesses and heat-tuned stress layers let one LDMOS flow improve N- and P-channel mobility without sacrificing RESURF.

An enclosed trench cavity and lower isolating member raise breakdown voltage while supporting the conductive member without thicker insulation.

Rapid thermal treatment forms an interfacial layer that preserves thin, conformal functional layers in high-aspect-ratio recesses for reliable contacts.

Back-to-back electroluminescent junctions modulate infrared wavelength and polarization by bias voltage while reducing external optical components.

Laser direct structuring and SMT place IR LEDs directly on display carriers, improving alignment precision while cutting manual assembly cost.

A vertical MESFET with laser-annealed crystallized silicon improves current control for 3D stackable PCM and RRAM multi-state memory.

A convex-concave front substrate uses diffuse reflection to hide solar cell electrodes without sacrificing light-receiving area or facade appearance.

Plasma treatment and ALD contacts reduce metal-induced gap states in 2D material FETs, improving mobility and electrostatic control.

An insulated gate and phased biasing confine the SPAD electric field to block parasitic charges and cut false single-photon detections.

Alternating smooth electrode regions and rough non-electrode regions improve layer deposition, passivation, and light use in solar cells.

Multiple adhesive layers with different optical and debonding properties let glass covers be removed without harming fragile OLED substrates.

A p+-type trench region and sidewall insulating film suppress hole injection and speed hole discharge, cutting reverse recovery loss while widening the safe operating range.

An integrated photoconductive region drives a high-voltage FET with light to avoid EMI while improving switching speed and lowering on-state resistance.

A graded collector with increased thickness and a doping discontinuity helps power amplifier bipolar transistors withstand stress without losing gain or linearity.

A single P-N junction emits upward and downward light, cutting chip thickness, power use, and packaging cost for dual-surface illumination.

An extended multiplication layer and dielectric isolation groove improve photocarrier transfer while cutting dark current and crosstalk noise.

Grooves exposing the substrate let the gate extend beyond the fin, increasing effective width to raise transconductance and reduce noise.

Segmented barrier layers in a nitride light-emitting element improve carrier supply through the tunnel junction, lowering forward voltage and boosting output.

A self-aligned backside contact flow reduces edge placement error and front-side power routing complexity in scaled nanowire ICs.

A split N+/lightly doped GaN layout lowers contact resistance while controlling drain-side electric fields for high current and voltage.

Simultaneous gate contact and via plug formation cuts contact capacitance and resistance while simplifying semiconductor fabrication.

Using TFT channel capacitance instead of p-n junctions, this varactor cuts parasitics, saves wafer front-side space, and improves Q factor.

A Ti silicide trench coating with TiN and tungsten lowers semiconductor contact resistance while resisting local barrier breaks during fabrication.

A depleted gate region and passivation layer suppress sidewall leakage in normally-off AlGaN/GaN HEMTs while preserving 2DEG control.

Preformed gates on each PN junction guide doping alignment, reducing mask placement errors and enabling controlled transistor configuration.

Stepped dielectric-defined field plates in GaN power transistors spread the gate-drain electric field, cutting leakage and dielectric failure risk.

Removable sacrificial and cover layers create a gap for clean functional-part peeling and accurate substrate transfer with fewer defects.

Tailored MgNiO/AlGa2O3 band alignment improves carrier injection for lower on-resistance, higher voltage handling, and bias-free UVC sensing.

A TiSi2 and TiN trench barrier with a tungsten fill lowers contact resistance and limits stress-driven breaks in silicon contacts.

Gap filling pillars and a pull-back process block conductive flow through dielectric seams, preventing bridging in dense memory cells.

A monocrystalline extrinsic base formed by selective epitaxy cuts HBT base resistance and base-collector capacitance for higher-frequency operation.

A P-well Schottky layout with floating N-well, deep N-well, and interdigitated contacts cuts reverse bias current while sustaining high forward current.

A built-in Schottky diode and SiC pillar layout suppress stacking fault growth while improving surge current withstand in SiC MOSFETs.

Larger exposed LED chip electrodes with insulating fill cut thermal resistance, improve bonding, and help prevent short circuits.

A through-hole electrode layout improves current spreading, light extraction, and heat dissipation in flip-chip red semiconductor emitters.

Differential edge-region doping and a field plate suppress SiC-oxide field crowding, keeping termination voltage uniform at high temperature.

Vertical channels and sidewall storage layers replace DRAM capacitors, shrinking cell area while improving charge storage stability.

A stacked conductive pattern and field plate on one gate side raises breakdown voltage, lowers on-resistance, and saves LDMOS area.

Ridge-and-gap HEMT fabrication removes etch damage and adds p-type layers to raise on-current without sacrificing device stability.

Double-patterned GAA fin structures use dielectric walls and inner spacers to tighten pitch, improve pattern fidelity, and raise integration density.

Compensation doping between trenches cuts field peaks at the body diode, preserving breakdown voltage while keeping on-resistance low.

T-shaped meta units tune different light wavelengths and correct optical aberrations to improve CMOS image sensor performance.

Multi-depth source contact faces in a SiC MOSFET expand contact area and cut parasitic resistance to lower on-resistance.

Surface-treated contact openings through stacked DRAM layers prevent seam formation during conductive fill, cutting process complexity and cost.

Barrier layers in LED contact electrodes block tin corrosion at pad gaps while improving electrical connection reliability and light output.

A planar gate plus a shallow second trench gate raises IGBT input capacitance to suppress self-turn-on while keeping fabrication efficient.

Hole and electron barrier layers block minority carrier flow into the absorption layer, cutting dark current in III-V photodetectors.

A semiconductor structure divides the carrier multiplication zone into sub-parts with distinct conductivity types to optimize gain.

Replacing AlGaAs with carbon-doped GaP resolves corrosion and absorption issues while maintaining reliable moisture stability.

A semiconductor device merges gate electrodes with a connection part to reduce on-resistance.

Photo-lithographic masks define roughened zones on LED surfaces to tune light extraction efficiency.

Gallium oxide replaces silicon nitride in the barrier layer, enabling efficient erasure while preventing parasitic trapping and data volatility.

Uniform fluorescent distribution on a raised chip region prevents color temperature variations while maintaining white light emission.

Bonding an InGaAsP laminate to a silicon support allows removing the brittle InP growth substrate, reducing device thickness to 80–200 μm without breakage.

A nitride semiconductor light-emitting element incorporates a graded layer with an Al composition ratio that increases at a predetermined rate.

Selective passivation protects the photosensitive surface of an avalanche photodiode, suppressing leakage current and carbon cluster formation.

Single-step molding integrates light extraction members with covering structures, eliminating singulation steps to reduce shape variations.

A light extraction pattern with a specific period prevents light reentry into the chip.

A semiconductor contact plug uses a stepped conductive layer to expand the upper surface area for improved connection.

Laser lift-off removes the sapphire substrate from the semiconductor chip, allowing direct thermal coupling that resolves thickness and stability trade-offs.

Nested housing and lid extension align detector modules while the dedicated heat dissipation structure manages thermal loads from integrated components.

Raised regions guide ion implantation to create tapered sidewalls, resolving uniformity trade-offs while blocking high voltages.

Segmented light-transmissive members with corner recesses resolve the trade-off between high luminance and structural complexity in vehicle lighting.

A semiconductor device with a convex substrate portion and optimized drain region impurity concentration.